SGM2013 Sony Corporation, SGM2013 Datasheet

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... GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features • Ultra-small package • ...

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... Min. Typ 0. G1S ( –2.0 –1.5 –1.0 –0.5 V – Gate 1 to source voltage [V] G1S SGM2013N (Ta = 25°C) Max. Unit –4 µA –4 µ –1.5 V –1 2 G2S = 0.5V 0.25V 0V –0.25V – ...

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... SGM2013N gm vs. V G1S = 2V) –1.5 –1.0 –0.5 V – Gate 1 source voltage [V] G1S NF – Drain to source voltage [V] DS NF 0.5V 2mA) DS G2S D Ga NFmin 0 ...

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... V = 0.5V 2mA) DS G2S D Rn (Ω) MAG 4.2 85.0 6.1 83.9 8.0 82.9 9.8 81.9 11.5 80.9 13.2 79.9 14.8 79.0 16.4 78.1 18.0 77.2 19.6 76.3 21.1 75.5 22.6 74.7 24.2 74.0 25.8 73.3 27.4 72.6 29.1 71.9 30.8 71.3 32.5 70.7 34.4 70.1 – 4 – = 2mA) D S12 S22 MAG ANG MAG 0.98 0.00 87.0 0.98 0.00 85.4 0.00 84.7 0.98 0.00 0.98 83.0 0.98 0.00 81.9 0.98 0.01 80.3 0.01 0.98 78.9 0.98 0.01 77.8 0.97 0.01 76.9 0.01 75.8 0.97 0.01 0.96 75.0 0.96 0.01 73.8 0.96 0.01 72.9 0.01 0.96 72.8 0.96 0.01 72.5 0.96 0.01 71.5 0.01 70.9 0.95 0.01 0.95 69.7 0.95 0.01 68.6 SGM2013N ANG –2.0 –3.1 –4.0 –5.2 –6.1 –7.2 –8.3 –9.7 –10.5 –11.7 –12.7 –13.8 –14.8 –15.9 –16.9 –18.0 –19.0 –20.0 –20.6 ...

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... Package Outline Unit 0.1 0.3 – 0.05 SONY CODE EIAJ CODE JEDEC CODE M-281 2.0 ± 0.2 1.3 (0.65) (0.65 0.1 0.4 – 0.05 (0.65) (0.6) 1.25 PACKAGE MATERIAL LEAD TREATMENT M-281 LEAD MATERIAL PACKAGE WEIGHT – 5 – SGM2013N 0.9 ± 0.1 0 ± 0.1 + 0.1 0.1 – 0. Source 2 : Gate Gate Drain EPOXY RESIN SOLDER PLATING COPPER 0.1g ...