NDS356 Fairchild, NDS356 Datasheet
NDS356
Manufacturer Part Number
NDS356
Description
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild
Datasheet
1.NDS356.pdf
(6 pages)
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Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
General Description
D
___________________________________________________________________ _____________
SuperSOT
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications such as notebook computer power management,
portable electronics, and other battery powered circuits where
fast high-side switching, and low in-line power
needed in a very small outline surface mount package.
NDS356AP
P-Channel Logic Level Enhancement Mode Field Effect Transistor
DSS
GSS
D
J
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
TM
-3
P-Channel logic level enhancement mode
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1a)
loss
(Note 1b)
(Note 1)
are
Features
-1.1 A, -30 V, R
Industry standard outline SOT-23 surface mount package
thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
using proprietary SuperSOT
R
NDS356AP
-55 to 150
G
DS(ON)
DS(ON)
±1.1
0.46
250
±20
±10
-30
0.5
75
= 0.2
= 0.3
D
TM
@ V
@ V
-3 design for superior
S
GS
GS
=-10 V.
=-4.5 V
September 1996
DS(ON)
NDS356AP Rev.C
.
Units
°C/W
°C/W
°C
W
V
V
A
1
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NDS356 Summary of contents
Page 1
... Exceptional on-resistance and maximum DC current capability 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) September 1996 = 0 =-4.5 V DS(ON 0 =-10 V. DS(ON design for superior . DS(ON NDS356AP Units -30 V ±20 V ±1.1 A ±10 0.5 W 0.46 -55 to 150 °C 250 °C/W 75 °C/W NDS356AP Rev.C 1 ...
Page 2
... 1.0 MHz GEN Min Typ Max Units - µA -10 µA 100 nA -100 nA -0.8 -1.6 -2.5 V -0.5 -1.3 -2.2 0.25 0.3 0.35 0.4 0.14 0 280 pF 170 3.4 4.4 nC 0 NDS356AP Rev.C ...
Page 3
... C/W when mounted on a 0.001 in pad of 2oz copper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -0.42 (Note Min Typ Max Units -0.42 A -10 A -0.8 -1 guaranteed NDS356AP Rev.C ...
Page 4
... Figure 6. Gate Threshold Variation . -4.0 -4.5 -5.0 -5.5 -6.0 -7 DRAIN CURRENT ( 25°C -55° DRAIN CURRENT ( 250µ JUNCTION TEMPERATURE (° with Temperature NDS356AP Rev ...
Page 5
... T = 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature V = -5V DS -15V GATE CHARGE (nC off d(off INVERTED PULSE WIDTH . NDS356AP Rev.C 1.2 . -10V ...
Page 6
... A 0 DRAIN-SOURCE VOLTAGE ( 4.5"x5" FR-4 Board Still Air V = -4.5V GS 0.1 0.2 0.3 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1b JA P(pk ( Duty Cycle 100 20 30 0.4 300 1 NDS356AP Rev.C ...