SP8M8 Rohm, SP8M8 Datasheet

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SP8M8

Manufacturer Part Number
SP8M8
Description
Switching
Manufacturer
Rohm
Datasheet

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Transistors
Switching
SP8M8
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC / DC converter.
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
1 Pw 10 s, Duty cycle 1%
2 MOUNTED ON A CERAMIC BOARD.
MOUNTED ON A CERAMIC BOARD.
Features
Application
Absolute maximum ratings (Ta=25°C)
Thermal resistance (Ta=25°C)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
I
P
GSS
I
I
DSS
DP
SP
D
S
D
Rth (ch-a)
Symbol
Nchannel
1.6
30
20
20
6.0
24
55 to 150
Limits
150
Limits
62.5
2
Pchannel
4.5
1.6
30
20
18
18
External dimensions (Unit : mm)
SOP8
Unit
C / W
Unit
W
V
V
A
A
A
A
C
C
1
1
2
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
2
Equivalent circuit
1 ESD PROTECTION DIODE
2 BODY DIODE
(8)
(1)
1.27
5.0 0.2
1
(7)
(2)
0.1
Each lead has same dimensions
0.4 0.1
2
(6)
(3)
1
0.2 0.1
(5)
(4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
SP8M8
1/5

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SP8M8 Summary of contents

Page 1

... A 6 1 150 150 Symbol Limits Unit 62 SP8M8 5.0 0.2 0.2 0.1 0.4 0.1 1.27 0.1 Each lead has same dimensions Equivalent circuit (8) (7) (6) (5) (8) (7) (6) ( (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source 2 (4) Tr2 (Pch) Gate ...

Page 2

... 1MHz 3A 10V 5 7.2 10 15V 6.0A D Min. Typ. Max. Unit 1 6.4A SP8M8 Conditions 1mA D 10V GS 4. 10V DS 15V Conditions 0V GS 2/5 ...

Page 3

... DS 190 120 pF f 1MHz 2.5A 10V 6 8 15V 4.5A D Min. Typ. Max. Unit 1 1.6A SP8M8 Conditions 1mA D 10V GS 4.5V GS 4.0V GS 10V DS 15V DD Conditions 0V GS 3/5 ...

Page 4

... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 V GS Pulsed Ta 125 100 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ) SP8M8 15V V 15V DD 10V Pulsed ...

Page 5

... On-State Resistance vs. Gate-Source Voltage 1000 V GS Pulsed Ta 125 100 10 10 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ) SP8M8 8 15V 7 10V TOTAL GATE CHARGE : Qg (nC) Fig.3 Dynamic Input Characteristics ...

Page 6

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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