BUK438-800A Philips Semiconductors, BUK438-800A Datasheet
BUK438-800A
Related parts for BUK438-800A
BUK438-800A Summary of contents
Page 1
... Drain-source on-state DS(ON) resistance PIN CONFIGURATION CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product specification BUK438W-800A/B MAX. MAX. UNIT -800A -800B 800 800 7.6 6.6 220 220 1.5 2.0 SYMBOL MAX. UNIT - 800 - 800 - 30 -800A -800B - 7.6 6 ...
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... 800 ˚ 800 =125 ˚ BUK438-800A 4.0 A BUK438-800B D CONDITIONS 4 MHz 2 ...
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... Fig.5. Typical output characteristics BUK438-800 100 100 ms 1000 = 25 ˚C Fig.6. Typical on-state resistance Product specification BUK438W-800A/B Zth j-mb / (K/ 0.5 0.2 0.1 0.1 0.05 0. 1E-07 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j-mb ...
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... 10000 80 100 120 140 Fig.12. Typical capacitances f Product specification BUK438W-800A/B VGS(TO max. typ. min. -60 -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION ...
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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions 7.6 A; parameter February 1998 640 100 0 Fig.14. Typical reverse diode current f SDS 5 Product specification BUK438W-800A/B BUK4y8-800 150 25 0.2 0.4 0.6 0.8 1 1.2 VSDS / V ); conditions parameter T GS Rev 1.000 j ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1998 16 max 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.15. SOT429 (TO247); pin 2 connected to mounting base. 6 Product specification BUK438W-800A/B 5.3 max 1.8 o 3.5 max 0.9 max Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 BUK438W-800A/B 7 Product specification Rev 1.000 ...