BUK9120-48TC Philips Semiconductors, BUK9120-48TC Datasheet

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BUK9120-48TC

Manufacturer Part Number
BUK9120-48TC
Description
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
with temperature sensing diodes
GENERAL DESCRIPTION
Protected N-channel enhancement
mode logic level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV and active
drain voltage clamping. Temperature
sensitive diodes are incorporated for
monitoring chip temperature.
The device is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT426
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
February 1998
PowerMOS transistor
Voltage clamped logic level FET
SYMBOL PARAMETER
V
V
I
I
I
I
P
I
I
V
T
T
D
D
D
DM
GD
GS
PIN
V
stg
j
mb
DS
DG
tot
TS
1
2
3
4
5
GS
gate
T1
(connected to mb)
T2
source
drain
technology
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Drain-gate clamp current
Gate-source clamp current
Source T1/T2 voltage
Storage temperature
Junction temperature
DESCRIPTION
the
device
QUICK REFERENCE DATA
PIN CONFIGURATION
V
-S
SYMBOL
V
I
P
T
R
D
F
j
(CL)DSR
tot
DS(ON)
F
CONDITIONS
continuous
continuous
-
T
T
T
T
T
5ms pulse;
5ms pulse;
-
-
-
1 2
mb
mb
mb
mb
mb
= 25 ˚C
= 100 ˚C
= 140 ˚C
= 25 ˚C
= 25 ˚C
3
4 5
PARAMETER
Drain-source clamp voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance; V
Forward voltage,temperature
sense diodes
Negative temperature
coefficient, temperature sense
diodes
Fig. 1.
1
= 0.01
= 0.01
mb
GS
= 5 V
SYMBOL
g
MIN.
MIN.
1.26
685
- 55
- 55
40
-
-
-
-
-
-
-
-
-
-
-
BUK9120-48TC
Product specification
TYP. MAX. UNIT
Fig. 2.
710
1.4
d
45
s
MAX.
208
116
175
175
40
38
10
52
37
25
50
50
100
1.54
116
175
735
55
52
20
Rev 1.100
T1
T2
UNIT
mA
mA
mV/K
˚C
˚C
W
V
V
V
A
A
A
A
V
m
mV
˚C
W
V
A

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BUK9120-48TC Summary of contents

Page 1

... Fig. 1. CONDITIONS continuous continuous - ˚ 100 ˚ 140 ˚ ˚ ˚C mb 5ms pulse; = 0.01 5ms pulse Product specification BUK9120-48TC MIN. TYP. MAX. UNIT 116 W 175 ˚ 685 710 735 mV 1.26 1.4 1.54 mV/K SYMBOL Fig. 2. ...

Page 2

... =175 ˚ mA =175 ˚ 250 uA 250 125 uA to 250uA F 2 Product specification BUK9120-48TC MIN. MAX. UNIT - 2 kV MIN. TYP. MAX. UNIT - - 1.29 K K/W MIN. TYP. MAX. UNIT 1.0 1.5 2.0 V ...

Page 3

... CONDITIONS T = 25˚C prior to clamping < inductive load G 3 Product specification BUK9120-48TC MIN. TYP. MAX. UNIT 2200 2900 pF - 400 500 pF - 215 300 ...

Page 4

... Fig.7. Typical output characteristics 0.03 0.025 10us 0.02 100 us 0.015 1 ms 10ms 0.01 100ms 0.005 100 0 VDS ˚C Fig.8. Typical on-state resistance Product specification BUK9120-48TC Zth/(K/W) 1 0.5 0.2 0 1E-06 0.0001 0.01 1 t/s Fig.6. Transient thermal impedance f(t); parameter j-mb p VGS/V = ...

Page 5

... V DS -1.25 -1.3 -1.35 -1.4 -1.45 Tmb / degC = 175 -1.5 25 -55 -1. Fig.14. Typical Vf temperature coefficient = 10 kOhm Vf Temp.Coef.= f(K); conditions Product specification BUK9120-48TC Tmb / degC = 175 25 - RG/kOhm Fig.12. Typical clamping voltage V = f(R ); conditions (CL)DSR 100 150 Diode Temperature /C Fig.13. Typical Vf of sense diodes Vf = f(K) ...

Page 6

... Fig.19. Typical turn-on gate-charge characteristics 100 Product specification BUK9120-48TC 0 VDS iss ); conditions MHz DS GS VDS = 14V QG/nC = f(Q ); conditions parameter Tj/C = 175 0 0.5 1 1.5 VSDS/V Fig.20. Typical reverse diode current. ) ...

Page 7

... DSS February 1998 VGS 0 140 160 180 = I,V VDD + -ID/100 P,E T.U. shunt Fig.24. Typical Inductive Clamping Waveforms V DSS DD 7 Product specification BUK9120-48TC + RD VDS - RG T.U.T. Fig.23. Switching test circuit. V (CL)DSR PDS = ID x VDS E = PDS dt W DSR Rev 1.100 VDD t t ...

Page 8

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". February 1998 10.3 MAX 0.85 MAX (x4) Fig.25. SOT426 : centre pin connected to mounting base. 11.5 9.0 3.4 1.7 1.7 3.8 Fig.26. SOT426 : soldering pattern for surface mounting . 8 Product specification BUK9120-48TC 4.5 MAX 1.4 MAX 0.5 17.5 1.3 (x4) Rev 1.100 ...

Page 9

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 9 Product specification BUK9120-48TC Rev 1.100 ...

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