US5U1 Rohm, US5U1 Datasheet

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US5U1

Manufacturer Part Number
US5U1
Description
2.5V Drive Nch+SBD MOSFET
Manufacturer
Rohm
Datasheet

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Part Number
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Quantity
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Part Number:
US5U1
Manufacturer:
ROHM
Quantity:
42 000
Part Number:
US5U1
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
2.5V Drive Nch+SBD MOSFET
US5U1
Silicon N-channel MOSFET /
Schottky barrier diode
1) Nch MOSFET and schottky barrier diode
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
<MOSFET>
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Source current
(Body diode)
Forward current surge peak
Power dissipation
Junction temperature
Type
US5U1
Structure
Features
Package specifications
Applications
Absolute maximum ratings (Ta=25°C)
are put in TUMT5 package.
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
F
schottky barrier diode.
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
Symbol
Symbol
TR
V
V
V
I
Tch
V
P
I
I
P
FSM
Tj
DSS
GSS
I
I
I
DP
SP
RM
D
S
F
D
R
D
∗1
∗1
∗2
∗1
∗2
Limits
Limits
±1.5
±6.0
0.75
150
150
0.5
2.0
0.5
6.0
0.7
30
12
30
20
W / ELEMENT
W / ELEMENT
Unit
Unit
°C
°C
V
V
A
A
V
V
A
A
A
A
∗1 ESD protection diode
∗2 Body diode
Inner circuit
Dimensions (Unit : mm)
TUMT5
(5)
(1)
∗1
(1)
Abbreviated symbol : U01
0.3
0.65 0.65
(2)
(5)
(2)
1.3
2.0
(4)
(3)
∗2
(4)
(3)
0.85Max.
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
0.77
0.17
Rev.A
0~0.1
US5U1
1/3

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US5U1 Summary of contents

Page 1

... Body diode Limits Unit ±1.5 A ∗1 ±6.0 A 0.75 A ∗1 6.0 A ∗2 0 ELEMENT °C 150 Limits Unit 0.5 A ∗1 2.0 A ∗2 0 ELEMENT °C 150 US5U1 2.0 0.85Max. 1.3 0.77 0.65 0.65 (5) (4) 0~0.1 (2) (3) (1) 0.3 0.17 Abbreviated symbol : U01 (4) ∗2 ∗1 (1)Gate (2)Source (2) (3) (3)Anode (4)Cathode (5)Drain Rev.A 1/3 ...

Page 2

... Typ. Max. Unit − − 1 0.75A Min. Typ. Max. Unit − − 0. 0.1A S − − 0. 0.5A S − − µA 100 I = 20V S US5U1 Unit °C Conditions =0V DS = 1mA 10Ω G Conditions =0V GS Conditions Rev.A 2/3 ...

Page 3

... Source-Drain Voltage 10 V Pulsed Ta=125°C 1 75°C 25°C −25°C 0.1 10 0.01 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) US5U1 10 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.001 2 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : V Fig.3 Typical Transfer Characteristics 10 V =0V ...

Page 4

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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