NDT451 Fairchild, NDT451 Datasheet

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NDT451

Manufacturer Part Number
NDT451
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild
Datasheet

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___________________________________________________________________________________________________________
* Order option J23Z for cropped center drain lead.
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
Absolute Maximum Ratings
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDT451N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field
effect
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and
performance. These devices are particularly suited for low
voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
,T
JA
JC
STG
transistors
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
are
produced
- Continuous
- Pulsed
provide superior switching
using
G
T
A
= 25°C unless otherwise noted
Fairchild's
D
D
(Note 1a)
(Note 1)
(Note 1c)
(Note 1a)
(Note 1b)
(Note 1a)
S
Features
5.5A, 30V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
DS(ON)
NDT451N
-65 to 150
= 0.05
±5.5
±20
±25
1.3
1.1
30
42
12
3
@ V
GS
= 10V.
G
September 1996
DS(ON)
D
.
NDT451N Rev. C2
S
Units
°C/W
°C/W
W
°C
V
V
A

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NDT451 Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) September 1996 = 0. 10V. DS(ON DS(ON NDT451N Units 30 ±20 ±5.5 ±25 3 1.3 1.1 -65 to 150 42 °C/W 12 °C/W NDT451N Rev °C ...

Page 2

... GEN GEN 5 Min Typ Max Units µA 20 µA 100 nA -100 0.7 1.2 2.2 0.042 0.05 0.065 0.1 0.064 0. 730 pF 370 pF 140 1 4 NDT451N Rev. C2 ...

Page 3

... C/W when mounted on a 0.0123 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions 5.5 A (Note Min Typ Max Units 2.5 A 0.8 1 guaranteed NDT451N Rev. C2 ...

Page 4

... DRAIN CURRENT (A) D and Drain Current 125°C J 25°C -55° DRAIN CURRENT (A) D Current and Temperature 250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. 6.0V 10V 125 150 NDT451N Rev. C2 ...

Page 5

... Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( 5.5A = 10V GATE CHARGE (nC off t t d(off PULSE WIDTH 1 INVERTED NDT451N Rev. C2 ...

Page 6

... V = 10V C 25° DRAIN-SOURCE VOLTAGE ( ( See Note P(pk Duty Cycle ( NDT451N Rev. C2 ...

Page 7

SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label SOT-223 Packaging Information Standard D84Z Packaging Option (no flow code) Packaging type TNR TNR 2,500 500 Qty per Reel/Tube/Bag Reel Size 13" Dia 7" Dia ...

Page 8

SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3 Pkg type SOT-223 6.83 7.42 12.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (12mm) Notes: A0, B0, and ...

Page 9

SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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