RUM003N02 Rohm, RUM003N02 Datasheet
Home Datasheets MOSFETs, GaNFETs - Single RUM003N02
Manufacturer Part Number
RUM003N02
Description
2.5V Drive Nch MOSFET
Available stocks
Part Number:
RUM003N02 T2L
Part Number:
RUM003N02 T2L
Part Number:
RUM003N02 (N)
Part Number:
RUM003N02 T2L
Manufacturer:
Rohm Semiconductor
Part Number:
RUM003N02 T2L
Part Number:
RUM003N02 T2L
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Transistor
2.5V Drive Nch MOSFET
RUM003N02
Silicon N-channel
MOSFET
Switching
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
4) Drive circuits can be simple.
5) Parallel use is easy.
Channel to ambient
Type
RUM003N02
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
∗ Each terminal mounted on a recommended land
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
portable equipment.
Package
Code
Basic ordering unit
(pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
8000
T2L
Symbol
I
V
V
P
Tstg
Tch
DP
GSS
I
D
DSS
D
∗
∗
Rth(ch-a)
2
1
Symbol
−55 to +150
∗
Limits
±300
±600
150
150
20
±8
Limits
833
(1)Base(IN)(Gate)
(2)Emitter(GND)(Source)
(3)Collector(OUT)(Drain)
Dimensions (Unit : mm)
VMT3
Unit
mW
mA
mA
°C
°C
V
V
°C / W
Unit
Abbreviated symbol : QT
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
Gate
∗1
RUM003N02
Rev.A
Source
Drain
∗2
1/3
Related parts for RUM003N02
RUM003N02 Summary of contents
... Pulsed I DP ∗ 150 D Tch 150 −55 to +150 Tstg Symbol Limits ∗ Rth(ch-a) 833 RUM003N02 Abbreviated symbol : QT Equivalent circuit Drain Gate ∗1 Unit Source ∗1 ESD PROTECTION DIODE V ∗2 BODY DIODE °C °C Unit ° Rev.A ∗ ...
... Ta=125°C 75°C 25°C −25°C Ta=125°C 1 75°C 25°C −25°C 0.1 1.0 1.5 0.01 0.1 (V) DRAIN CURRENT : I GS Fig.2 Static drain-source on-state resistance vs. drain current (Ι) RUM003N02 Conditions =±8V =1mA =20V =10V, I =1mA ...
... (on Fig.9 Switching time waveforms RUM003N02 100 = Pulsed Ta=125°C 75°C 25°C 10 −25° 0.01 0 1.5 DRAIN-SOURCE VOLTAGE : V (V) SD Fig.6 Typical capacitance vs. drain-source voltage Pulse width 90% 50% 10% ...
... ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog ...
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