NTD25P03L ON Semiconductor, NTD25P03L Datasheet
NTD25P03L
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NTD25P03L Summary of contents
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... Lead) R 120 qJA 25P03L T 260 NTD25P03L NTD25P03LG NTD25P03L1 NTD25P03LT4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX (BR)DSS DS(on) D − 5.0 V − ...
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... BODY−DRAIN DIODE RATINGS (Note 3) Diode Forward On−Voltage (I = −25 Adc Reverse Recovery Time Reverse Recovery Stored Charge 300 ms, Duty Cycle 3. Pulse Test: Pulse Width 4. Switching characteristics are independent of operating junction temperature. NTD25P03L ( unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS ...
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... Figure 3. On−Resistance versus Drain Current and Temperature 1 −12 −5 V 1.4 GS 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature NTD25P03L − −V , GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2 ...
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... NTD25P03L POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring ...
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... The abruptness of diode reverse recovery effects the amount of radiated noise, voltage spikes, and current ringing. The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon Figure 10. Diode Forward Voltage versus Current NTD25P03L 30 1000 − ...
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... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTD25P03L SAFE OPERATING AREA reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified ...
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... TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E−05 1.0E−04 1.0E− Figure 14. Diode Reverse Recovery Waveform NTD25P03L P (pk DUTY CYCLE 1.0E−02 1.0E−01 t, TIME (s) Figure 13. Thermal Response di/ TIME 0. http://onsemi.com 7 R (t) = r(t) R qJC ...
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... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD25P03L PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...
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... −T− SEATING K PLANE 0.13 (0.005) M NTD25P03L PACKAGE DIMENSIONS DPAK CASE 369D−01 ISSUE O C NOTES http://onsemi.com 9 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN ...
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... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 10 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD25P03L/D ...