SPI-336-99-T1 Sanyo Semicon Device, SPI-336-99-T1 Datasheet

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SPI-336-99-T1

Manufacturer Part Number
SPI-336-99-T1
Description
Ultraminiature photoreflector supporting reflow soldering Single transistor type
Manufacturer
Sanyo Semicon Device
Datasheet
Ordering number : EN6030
Features
Absolute Maximum Ratings at Ta=25 C, 65%RH (as per JIS C7032)
Electro-Optical Characteristics at Ta=25 C, 65%RH
* 1
* 2
* 3
Input LED
Output
Phototransistor
Input
Output
Coupled
Location of reflector is shown in Fig. 1.
No reflector
Table of Classification of Collector Output
Ic ( A)
Class
DIP type
Visible light cut type
Taping type
Infrared LED plus Phototransistor (single)
Compact type : 3.4 (L)
Forward Voltage
Reverse Current
Dark Current
Collector Output
Leakage Current
Collector Emitter
Rise Time
Fall Time
Parameter
1100 to 450
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Operating Temperature
A
Storage Temperature
SANYO Electric Co.,Ltd. Semiconductor Company
Parameter
Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Curren
Power Dissipation
Ultraminiature photoreflector supporting reflow soldering
600 to 260
2.7 (W)
B
V
Symbol
I
CE
I
LEAK
1.5 (H) mm
V
CEO
I
I
tr
tf
350 to 150
R
C
(sat)
F
C
SPI-336-99-T1
I
V
I
I
I
I
V
I
F
F
F
F
F
C
R
CC
=10mA
=0mA, V
=10mA, V
=10mA, V
=10mA, I
=1mA
=5V
=5V, R
Condition
200 to 80
D
CE
L
C
CE
CE
=100
=50 A
=10V
=5V
=5V
Symbol
V
V
Topr
Tstg
V
P
P
CEO
ECO
I
I
F
C
* 1
* 2
D
C
R
Fig. 1
Min.
1.0
80
- -
- -
- -
- -
- -
- -
Location of Reflector
(Single transistor type)
- -30 to +100
- -20 to +80
Rating
Typ.
1.2
50
70
20
20
70
SPI-336-99-T1
5
5
- -
- -
- -
- -
- -
5
5
72199 GI, ( MI )
Glass plate (t=1mm)
AL V.E. film
Max.
1100
200
1.6
0.5
10
1
--
--
Infrared LED
No.6030 1/6
Unit
mW
mW
mA
mA
V
V
V
Unit
C
C
nA
V
V
A
A
A
s
s

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SPI-336-99-T1 Summary of contents

Page 1

... LEAK (sat) I =10mA =5V, R =100 =1mA 600 to 260 350 to 150 200 to 80 SPI-336-99-T1 (Single transistor type) Symbol Rating CEO V 5 ECO Topr - -20 to +80 Tstg - -30 to +100 Min ...

Page 2

... C 100 0.5 1 Forward Voltage V F (V) Collector Current vs. Collector-emitter Voltage 1000 Ta=25 C 800 600 400 200 Collector-emitter Voltage V CE (V) SPI-336-99-T1 Power Dissipation vs. Ambient Temperature 120 (Rating) 100 100 --25 500 400 0 C 300 --25 C 200 100 0 1.5 ...

Page 3

... Load Resistance Relative Collector Current vs. Distance 120 100 Distance between sensor and Al evaporation d (mm) SPI-336-99-T1 Collector Dark Current vs. Ambient Temperature - 100 100 120 I F =10mA V CE =5V ...

Page 4

... SPI-336-99- 0.4 0.6 3.4 Pin connection 1. LED Anode Pin No. 2. LED Cathode 3 .Ph. Tr Collector 4. Ph. Tr Emitter 4.3 (3.47) 2.7 0.5 Tolerance : 0.2 Unit : mm No.6030 4/6 ...

Page 5

... The product should be kept under the conditions below, if the product is not stored in the dry paking. Temperature Humidity Term w The product to be out the term without dry packing must be practiced baking. Baking conditions (7) The reflow conditions must be confirmed that no problem by your reflow furnace. SPI-336-99-T1 Max 120sec : Max 70%RH : Max 7days : + 20Hr Max 10sec Max 60sec 0 ...

Page 6

... Special precautions must be taken in handling this product because it contains, gallium arsenic, which is designated as a toxic substance by law. Be sure to adhere strictly to all applicable laws and regulations enacted for this substance, particularly when it comes to disposal. Manufactured by ; SPI-336-99-T1 CAUTION Tottori SANYO Electric Co., Ltd. LED Division ...

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