PHT6N03T Philips Semiconductors, PHT6N03T Datasheet - Page 4

• Manufacturer Part Number: PHT6N03T
• Description: TrenchMOS transistor Standard level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
November 1997
TrenchMOS
Standard level FET
ID% = 100 I
0.01
100
0.1
10
I
1
Fig.2. Normalised continuous drain current.
D
0.1
120
110
100
120
110
100
ID / A
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
Fig.3. Safe operating area. T
0
0
Fig.1. Normalised power dissipation.
0
0
DM
PD%
ID%
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
1
DS
); I
40
40
DC
transistor
= f(T
DM
single pulse; parameter t
60
60
VDS / V
mb
D
Tmb / C
Tmb / C
/P
10
); conditions: V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
100
= f(T
100
tp = 10 us
100 us
1 ms
10 ms
100 ms
mb
100
mb
120
120
= 25 ˚C
)
7830-30
GS
140
140
10 V
1000
p
4
60
50
40
30
20
10
Fig.5. Typical output characteristics, T
0
0
Fig.6. Typical on-state resistance, T
1E+02
1E+01
1E+00
6
5
4
3
2
1
1E-01
1E-02
0
0
ID / A
RDS(ON) / mOhm
1E-07
Fig.4. Transient thermal impedance.
12
Zth j-amb / (K/W)
0.05
0.02
D =
0.5
0.2
0.1
Z
10
0
R
th j-mb
2
I
DS(ON)
D
10
1E-05
= f(V
= f(t); parameter D = t
20
= f(I
DS
6
4
1E-03
); parameter V
D
VDS / V
); parameter V
ID / A
30
VGS / V =
t / s
6.5
VGS / V =
1E-01
6
P
D
40
Product specification
GS
t
1E+01
p
PHT6N03T
T
GS
p
BUK7830-30
/T
8
50
j
BUKX83
j
7830-30
= 25 ˚C .
D =
= 25 ˚C .
Rev 1.200
t
T
1E+03
p
t
8
10
12
6.5
5.5
4.5
60
8
6
5
4
10