BF822 Diotec Semiconductor, BF822 Datasheet
BF822
Manufacturer Part Number
BF822
Description
Surface mount Si-Epitaxial PlanarTransistors
Manufacturer
Diotec Semiconductor
Datasheet
1.BF822.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF822
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BF822,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1
2
10
BF 720, BF 722
Maximum ratings (T
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (T
Collector-Base cutoff current – Kollektorreststrom
Emitter-Base cutoff current – Emitterreststrom
Collector saturation volt. – Kollektor-Sättigungsspg.
) Mounted on P.C. board with 3 mm
) Tested with pulses t
NPN
I
I
I
I
Montage auf Leiterplatte mit 3 mm
E
E
C
C
= 0, V
= 0, V
= 0, V
= 30 mA, I
1
1 = B
Dimensions / Maße in mm
0.7
2.3
6.5
3
CB
CB
EB
±0.1
±0.2
2
3.25
2, 4 = C
= 200 V
= 200 V, T
= 5 V
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
4
B
= 5 mA
3
p
j
= 300
= 25
A
3 = E
Surface mount Si-Epitaxial PlanarTransistors
= 25
1.65
j
:
/
= 150
s, duty cycle
C)
/
C)
2
2
copper pad at each terminal
/
Kupferbelag (Lötpad) an jedem Anschluß
C
#
2% – Gemessen mit Impulsen t
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
B open
E open
C open
I
I
I
V
CB0
CB0
EB0
V
V
V
P
I
I
I
T
T
CEsat
Grenzwerte (T
C
CM
BM
2
tot
j
S
)
CE0
CB0
EB0
Min.
p
–
–
–
–
= 300
BF 720
300 V
300 V
A
High Voltage Transistors
= 25
:
- 65…+ 150
s, Schaltverhältnis
Kennwerte (T
/
1.5 W
100 mA
200 mA
100 mA
Typ.
C)
150
5 V
–
–
–
–
/
C
1
)
/
BF 722
250 V
250 V
C
600 mV
#
SOT-223
j
10
10 nA
50 nA
01.11.2003
Max.
= 25
2%
0.04 g
1.5 W
NPN
:
A
/
C)
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BF822 Summary of contents
Page 1
BF 720, BF 722 Surface mount Si-Epitaxial PlanarTransistors NPN Si-Epitaxial PlanarTransistoren für die Oberflächenmontage ±0.2 6.5 ±0.1 1. 0.7 2.3 3.25 Dimensions / Maß ...
Page 2
High Voltage Transistors / Characteristics ( current gain – Kollektor-Basis-Stromverhältnis Gain-Bandwidth Product – Transitfrequenz mA 100 ...