NE5210 Philips, NE5210 Datasheet
NE5210
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NE5210 Summary of contents
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... Philips Semiconductors Transimpedance amplifier (280MHz) DESCRIPTION The NE5210 transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES Low noise: 3.5pA/ Hz ...
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... DC tested, V =0. Equivalent AC test circuit 3 DC tested, V =0. Equivalent AC test circuit 4 DC tested, V =0.1V CC Equivalent AC test circuit 5 f=0.1MHz, Test Circuit 6 2 Product specification NE5210 =5V and CC LIMITS UNIT UNIT Typ Max 0.8 0.95 V 3.3 3 160 ...
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... Test Circuit 1 SPECTRUM ANALYZER 60DB CC1 CC2 0 OUT IN DUT NC 0 OUT GND GND 1 2 Test Circuit 2 3 Product specification NE5210 LIMITS UNIT UNIT Typ Max 3 0.8 1.2 ns line. CC DIFFERENTIAL V OUT R 2 S21 S21 S22 1 S22 ...
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... NH0300HB 33 OUT 0.1 F GND 1 2 Test Circuit 3 NETWORK ANALYZER S-PARAMETER TEST SET PORT 1 CURRENT PROBE 1mV/ CC1 0 OUT 100 TRANSFORMER BAL. NH0300HB 33 OUT 0.1 F GND 1 2 Test Circuit 4 4 Product specification NE5210 PORT 2 CAL 50 TEST UNBAL. PORT 2 CAL 50 TEST UNBAL. SD00320 ...
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... NH0300HB 33 OUT 0.1 F GND 1 2 Test Circuit 5 NETWORK ANALYZER S-PARAMETER TEST SET PORT 1 CURRENT PROBE 1mV/mA 16 GND OUT 100 TRANSFORMER BAL. NH0300HB 33 OUT 0 CC2 Test Circuit 6 5 Product specification NE5210 PORT 2 CAL 50 TEST UNBAL. PORT 2 CAL 50 TEST UNBAL. SD00321 ...
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... Philips Semiconductors Transimpedance amplifier (280MHz) TEST CIRCUITS (Continued) PULSE GEN. 50 1995 Apr CC1 CC2 0 OUT 0 DUT 33 OUT 0.1 F Measurement done using GND GND 2 differential wave forms 1 Test Circuit 7 6 Product specification NE5210 OSCILLOSCOPE SD00322 ...
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... Typical Differential Output Voltage vs Current Input 5V + OUT + IN DUT – OUT – GND GND 2 1 –240 –160 – 160 CURRENT INPUT ( A) NE5210 TEST CONDITIONS Procedure 1 R measured – V )/(+60 A – (–60 A Where: V Measured Measured Procedure 2 Linearity = 1 – ...
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... PIN 12 3.34 3.30 – AMBIENT TEMPERATURE ( C) NE5210 Output Bias Voltage vs Temperature 4.1 PIN 14 3.9 5.5V 3.7 3.5 5.0V 3.3 3.1 4.5V 2.9 2.7 – AMBIENT TEMPERATURE ( C) NE5210 Differential Output Swing vs Temperature 4.0 DC TESTED 3 3.6 5.5V 3.4 3.2 5.0V 3.0 2.8 4.5V 2.6 2.4 2.2 – AMBIENT TEMPERATURE ( C) 8 Product specification NE5210 Output Voltage vs Input Current 4 ...
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... Product specification NE5210 NE5210 Differential Transresistance vs Temperature 8 8.4 8.2 8.0 5.5V 7.8 5.0V 4.5V 7.6 7.4 – AMBIENT TEMPERATURE ( C) NE5210 Bandwidth vs Temperature 450 PIN 12 SINGLE-ENDED 400 5. 350 5.0V 300 4.5V 250 200 – AMBIENT TEMPERATURE ( C) NE5210 Typical Bandwidth Distribution (70 Parts from 4 Wafer Lots) ...
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... Apr 26 (Continued) NE5210 Output Resistance vs Temperature 16 PIN 12 OUTPUT REFERRED 15 4.5V 14 5.0V 5. – AMBIENT TEMPERATURE ( C) NE5210 Power Supply Rejection Ratio vs Temperature 5.0V CC1 CC2 0. TESTED 38 OUTPUT REFERRED – ...
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... The maximum input current before output stage clipping occurs at typically 240 A. The NE5210 is a bipolar transimpedance amplifier which is current driven at the input and generates a differential voltage signal at the outputs. The forward transfer function is therefore a ratio of the differential output voltage to a given input current with the dimensions of ohms ...
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... avMIN 200 10 , and the F 1139nW in RMS where h is Planck’s Constant the speed of light, wavelength. The minimum input current to the NE5210, at this input power is avMIN 1139 10 for an = 792nA RMS Choosing the maximum peak overload current of I maximum mean optical power is: ...
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... V (TTL) OUT NOTE: The NE5210/NE5217 combination can operate at data rates in excess of 100Mb/s NRZ The capacitor C7 decreases the NE5210 bandwidth to improve overall S/N ratio in the DC–50MHz band, but does create extra high frequency noise on the NE5210 V pin(s). CC 1995 Apr 26 quiescent values of 3.3V (for a 5V supply), then the circuit may be oscillating ...
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... Apr Figure 5. NE5210 Bonding Diagram carriers impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die. Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales ...