NE57810S Philipss, NE57810S Datasheet
NE57810S
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NE57810S Summary of contents
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NE57810 Advanced DDR memory termination power with external reference in Product data Supersedes data of 2002 Jul 16 INTEGRATED CIRCUITS 2003 Sep 12 ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in DESCRIPTION The NE57810 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system ...
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... Advanced DDR memory termination power with external reference in ORDERING INFORMATION PACKAGE TYPE NUMBER TYPE NUMBER NAME DESCRIPTION NE57810S SPAK-5 plastic single-ended surface mounted package; 5 leads Part number marking The package is marked with the part number. The remaining characters are manufacturing codes. PIN CONFIGURATION 1 ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in ELECTRICAL CHARACTERISTICS + 2 –3 +3.5 A, unless otherwise specified. amb DD TT SYMBOL PARAMETER V ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in TYPICAL PERFORMANCE CURVES Figure 3. V transient response TT (output filter 50 F ceramic) Figure 5. V -to-V transient response ref TT (output filter 820 ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in 1.300 1.290 1.280 1.270 1.260 1.250 1.240 1.230 1.220 1.210 1.200 –6 –5 –4 Figure 7. Typical V 2003 Sep 12 NORMAL OPERATING REGION OUTPUT SINK OUTPUT SOURCE –3 ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in TECHNICAL DISCUSSION The NE57810 supplies power to the DDR memory bus termination 1 resistors at nominally / the voltage supplied to the memory ICs or 2 DIMMs. DDR memory ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in THERMAL DESIGN Designing the proper thermal system for the NE57810 is important to its reliable operation. The NE57810 will be operating at an average power level less than the ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in APPLICATION INFORMATION The NE57810 can be used in a variety of DDR memory configurations. Its small footprint, fast transient response and lessened need for large bulk output capacitance, makes ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in Externally programmed V output voltage TT The NE57810 allows use of an external reference voltage to set its V output voltage. This pin (ExtRefIn pin 4) is used for ...
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... To do this recommended that two NE57810s are used, one to terminate each memory bank. Cascading NE57810 terminators offers two advantages, it improves ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in TEST CIRCUITS V IN 820 F OSCON 2003 Sep NE57810 4 1 ExtRefIn V TT ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in PACKING METHOD The NE57810 is packed in reels, as shown in Figure 18. GUARD TAPE BAND BARCODE LABEL BOX 2003 Sep 12 REEL ASSEMBLY Figure 18. Tape and reel ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in Plastic single-ended surface mounted package; 5 leads 2003 Sep 12 14 Product data NE57810 SOT756 ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in REVISION HISTORY Rev Date Description _2 20030912 Product data (9397 750 11214). ECN 853-2359 29723 of 28 March 2003. Supersedes data of 16 July 2002 (9397 750 10147). Modifications: ...
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Philips Semiconductors Advanced DDR memory termination power with external reference in Data sheet status Product [1] Level Data sheet status [2] [3] status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most ...