BLF0810S-90 Philips Semiconductors, BLF0810S-90 Datasheet
BLF0810S-90
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BLF0810S-90 Summary of contents
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... DATA SHEET M3D379 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 DISCRETE SEMICONDUCTORS M3D461 2003 Jun 12 ...
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... common source test circuit (MHz) (V) = 890. 890 (PEP) 2 890 27 15 (AV) 2 Product specification BLF0810-90; BLF0810S-90 PIN DESCRIPTION 1 drain 2 gate 3 source; connected to flange Top view MBL105 Fig.2 Simplified outline SOT502B (BLF0810S-90 (W) (dB) (%) (dBc ACPR 750 3 (dBc ...
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... GSth I drain-source leakage current DSS I on-state drain current DSX I gate leakage current GSS g forward transconductance fs R drain-source on-state resistance DSon 2003 Jun 12 BLF0810-90; BLF0810S-90 PARAMETER CONDITIONS (AV), note (AV), note CONDITIONS ...
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... kHz MDB170 50 handbook, halfpage (%) (dBc 100 P L (PEP) ( 890.1 MHz. 2 Fig.4 4 Product specification BLF0810-90; BLF0810S-90 MIN. TYP degradation in output power 400 mA 450 mA 40 500 mA 600 mA 60 ...
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... D ACPR (%) (dB (AV)(dBm measured under CDMA conditions; test signal standard IS-95. Fig.8 5 Product specification BLF0810-90; BLF0810S- 600 mA 500 mA 40 450 mA 60 400 (PEP) ( 890.0 MHz 890.1 MHz. ...
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... Jun 12 MDB176 handbook, halfpage 0. (GHz) = 560 mA Class-AB operation Values comprised for different parameters. Fig.10 Input impedance as a function of frequency drain Z L MGS998 6 Product specification BLF0810-90; BLF0810S- 0.8 0.85 0.9 0. 560 mA (series components) ...
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... 2003 Jun Fig.12 Test circuit for 860 to 900 MHz. 7 Product specification BLF0810-90; BLF0810S-90 C15 L12 C17 L10 C9 Vsupply C10 L11 L14 L15 L16 RF out C13 C18 C11 C12 C16 L13 C14 ...
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... BLF0810-90 input Rev C BLF0810-90 input Rev C 40 Fig.13 Component layout for 860 to 900 MHz test circuit. 8 Product specification BLF0810-90; BLF0810S-90 BLF0810-90 output Rev C C15 C17 C17 C9 C10 C13 C18 C11 C12 C16 C16 C14 BLF0810-90 output Rev C ...
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... C4, C9, C10, C11, C12 tantalum capacitor C5, C18 air trimmer capacitor C7, C8 multilayer ceramic chip capacitor R1 potentiometer Q1 7808 voltage regulator Q2 BLF0810-90/BLF0810S-90 LDMOS transistor L1 stripline; note 2 L2 stripline; note 2 L3 stripline; note 2 L4 stripline; note 2 L5 ferroxcube L6 stripline ...
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... 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9.25 0.89 18.92 4.32 0.786 0.374 0.375 0.785 0.045 0.210 0.774 0.366 0.364 0.035 0.745 0.170 REFERENCES JEDEC JEITA 10 Product specification BLF0810-90; BLF0810S- 3.38 1.70 34.16 9.91 27.94 0.25 3.12 1.45 33.91 9.65 0.133 0.067 1.345 0.390 1.100 ...
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... 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9.25 0.89 18.92 4.32 0.786 0.374 0.375 0.045 0.785 0.210 0.774 0.366 0.364 0.035 0.745 0.170 REFERENCES JEDEC JEITA 11 Product specification BLF0810-90; BLF0810S- 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 0.805 0.380 EUROPEAN ISSUE DATE PROJECTION SOT502B 99-12-28 03-01-10 ...
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... Product specification BLF0810-90; BLF0810S-90 DEFINITION These products are not Philips Semiconductors ...
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... Philips Semiconductors Base station LDMOS transistors 2003 Jun 12 BLF0810-90; BLF0810S-90 NOTES 13 Product specification ...
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... Philips Semiconductors Base station LDMOS transistors 2003 Jun 12 BLF0810-90; BLF0810S-90 NOTES 14 Product specification ...
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... Philips Semiconductors Base station LDMOS transistors 2003 Jun 12 BLF0810-90; BLF0810S-90 NOTES 15 Product specification ...
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... Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. ...