BLF1048 Philips Semiconductors, BLF1048 Datasheet - Page 2

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BLF1048

Manufacturer Part Number
BLF1048
Description
UHF power LDMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT502A) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
2000 Feb 02
CW, class-AB (2-tone)
CW, class-AB (1-tone)
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 1 GHz).
Communication transmitter applications in the UHF
frequency range.
UHF power LDMOS transistor
MODE OF OPERATION
h
= 25 C in a common source test circuit.
f
1
= 960; f
(MHz)
960
f
2
= 960.1
CAUTION
V
(V)
26
26
2
DS
PINNING - SOT502A
handbook, halfpage
PIN
90 (PEP)
1
2
3
(W)
P
90
L
Fig.1 Simplified outline.
Top view
drain
gate
source, connected to flange
(dB)
>14
>14
G
p
1
2
DESCRIPTION
Preliminary specification
>35
>45
(%)
MBK394
D
3
BLF1048
(dBc)
d
im
26

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