BLF2022-125 Philips Semiconductors, BLF2022-125 Datasheet
BLF2022-125
Related parts for BLF2022-125
BLF2022-125 Summary of contents
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... DATA SHEET BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 DISCRETE SEMICONDUCTORS M3D792 2003 Mar 07 ...
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... For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Mar 07 PINNING - SOT634A (MHz) (V) 2110 to 2170 28 PARAMETER CAUTION 2 Objective specification BLF2022-125 PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange Top view MBL367 Fig.1 Simplified outline. ...
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... 240 mA 4 GSth MHz Objective specification BLF2022-125 VALUE UNIT 0.55 K/W MIN. TYP. MAX. UNIT 9.5 S 0.07 tbd pF ...
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... W (AV); D out I = 1000 mA; ACPR is measured MHz and f = +10 MHz (AV); D out I = 1000 Objective specification BLF2022-125 MIN. TYP. MAX. UNIT dBc degradation in RF performance before and after test MIN. ...
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... REFERENCES JEDEC EIAJ 5 Objective specification BLF2022-125 Package under development Philips Semiconductors reserves the right to make changes without notice ...
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... Objective specification BLF2022-125 DEFINITION These products are not Philips Semiconductors ...
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... Philips Semiconductors UHF power LDMOS transistor 2003 Mar 07 NOTES 7 Objective specification BLF2022-125 ...
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... Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. ...