PD8933 Mitsubishi Electric Semiconductor, PD8933 Datasheet

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PD8933

Manufacturer Part Number
PD8933
Description
InGaAs AVALANCHE PHOTO DIODES
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet
TYPE
NAME
DESCRIPTION
PD8XX3 series are InGaAs avalanche photodiode which has
a sensitive area of
the light having a wavelength band of 1000 to 1600nm. This
photodiode features low noise, a high quantum efficiency and
a high speed response is suitable for the light receiving
element for long - distance optical communications.
ABSOLUTE MAXIMUM RATING
ELECTRICAL /OPTICAL CHARACTERISTICS
Symbol
Symbol
I
I
T
T
V
C
I
fc
R
F
D
C
stg
(BR)R
t
Reverse current
Forward current
Case temperature
Storage temperature
Breakdown voltage
Capacitance
Dark current
Quantum efficiency
Cutoff frequency (-3dB)
PD8933
35
Parameter
parameter
m, PD8XX3 is suitable for receiving
I
V
V
M = 1,
M = 10,R
R
R
R
= 100
= 0.9V
= 0.9V
Conditions
= 1550nm
L
-
-
-
-
A
(BR) R
(BR) R
= 50 , - 3dB
(T
Test conditions
,f = 1MHz
C
= 25 ˚C )
FEATURES
• 35
• Low noise
• High speed response
• Small dark current
• High quantum efficiency
APPLICATION
Receiber for long-distance fiber-optic communication systems
- 40 ~+ 100
m active diameter
- 40 ~+ 85
Ratings
InGaAs AVALANCHE PHOTO DIODES
500
2
MITSUBISHI LASER DIODES
Min.
PD8XX3 SERIES
1.8
40
Unit
-
-
-
mA
˚C
˚C
A
Limits
Typ.
0.5
2.5
60
30
80
Max.
0.7
90
60
-
-
SEP.2000
GHz
Unit
pF
nA
%
V

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PD8933 Summary of contents

Page 1

... TYPE PD8933 NAME DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has a sensitive area PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a high speed response is suitable for the light receiving element for long - distance optical communications ...

Page 2

... OUTLINE DRAWINGS PD8933 MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES Dimension : mm SEP.2000 ...

Page 3

TIPICAL CHARACTERISTICS Fig.1 Spectral response Fig.3 Total capacitance vs. reserve voltage Fig.4 Frequency response MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES Fig.2 Dark current, photo current, and multiplication rate vs. reverse voltage Fig.5 Multiplication rate dependence of cutoff ...

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