NE688 CEL, NE688 Datasheet - Page 7

• Manufacturer Part Number: NE688
• Description: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
• Manufacturer: CEL

TYPICAL SCATTERING PARAMETERS
Note:
1.Gain Calculations:
NE68830
V
V
MAG =
FREQUENCY
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
CE
CE
= 3.0 V, I
= 5.0 V, I
GHz
4.0
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
5.0
|S
|S
21
12
|
|
(
K ±
C
C
= 20 mA
= 10 mA
0.313
0.289
0.283
0.280
0.278
0.365
0.311
0.291
0.289
0.285
0.472
0.285
0.271
0.285
0.656
0.380
0.299
0.289
0.307
0.385
MAG
K - 1
2
S
).
11
-155.500
-143.700
-171.000
-179.400
-119.100
-166.800
When K ≤ 1, MAG is undefined and MSG values are used. MSG =
153.300
103.100
131.600
110.900
165.900
143.200
131.700
114.200
173.200
157.500
145.100
-66.200
-44.300
98.500
ANG
22.050
29.896
10.607
4.472
2.400
2.003
1.440
1.272
9.847
5.283
2.964
2.315
1.686
5.532
4.287
1.932
1.388
1.225
MAG
3.076
1.747
S
21
134.700
146.100
104.200
97.700
78.800
68.600
51.900
44.400
83.500
86.600
69.500
60.200
43.900
30.500
59.900
31.100
18.100
81.100
51.600
17.800
ANG
(T
A
= 25°C)
0.024
0.061
0.135
0.196
0.256
0.314
0.473
0.553
0.029
0.067
0.107
0.129
0.239
0.453
0.543
0.110
0.294
0.371
0.183
0.349
MAG
S
12
67.800
70.500
64.400
60.300
45.900
70.900
59.500
64.100
65.200
63.500
60.600
57.000
48.400
69.600
70.700
68.100
55.800
35.300
65.300
38.300
ANG
|S
|S
21
12
|
|
, K = 1 + | ∆ | - |S
0.707
0.276
0.154
0.134
0.129
0.132
0.138
0.134
0.124
0.835
0.400
0.258
0.232
0.204
0.197
0.201
0.207
0.173
0.205
0.173
MAG
2 |S
S
-169.400
-142.100
-110.400
-100.900
2
22
-41.100
-66.500
-72.100
-83.700
-89.700
-29.100
-57.400
-63.600
-67.100
-71.700
-76.800
-83.200
-70.800
-75.600
-79.500
-62.400
12
ANG
S
11
21
| - |S
2
|
22
|
2
0.408
0.884
0.994
1.012
1.025
1.022
1.006
0.992
0.981
1.013
0.264
1.028
1.028
1.016
1.006
0.982
0.965
0.732
0.949
0.989
,
∆ = S
K
11
S
22
22.403
14.543
21.672
11.073
28.810
16.935
15.216
30.954
17.015
10.998
- S
8.840
6.382
3.533
8.816
7.348
6.272
4.835
3.618
7.393
4.863
MAG
(dB)
21
S
12
1