SLD-1026Z Sirenza Microdevices, SLD-1026Z Datasheet

SLD-1026Z

Manufacturer Part Number

SLD-1026Z

Description

3 Watt Discrete LDMOS Device Plastic Surface Mount Package

Manufacturer

Sirenza Microdevices

Datasheet

1.SLD-1026Z.pdf (21 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SLD-1026Z-EVAL-4

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SLD-1026Z-EVAL-5

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SLD-1026Z-EVAL-6

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SLD-1026Z-EVAL-7

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SLD-1026Z-EVAL-8

Manufacturer:

RFMD

Quantity:

5 000

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Functional Schematic Diagram

Product Description

Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance

LDMOS transistor designed for operation from 10 to 2700MHz. It is an

excellent solution for applications requiring high linearity and efficiency

at a low cost. The SLD-1026Z is typically used in the design of driver

stages for power amplifiers, repeaters, and RFID applications.The

power transistor is fabricated using Sirenza’s latest, high performance

LDMOS II process. This product features a RoHS/WEEE Compliant

package with matte tin finish, designated by the ‘Z’ suffix.

RF Specifications

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such

information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices

303 S. Technology Court,

Broomfield, CO 80021

Test Conditions

2 carrier WCDMA

performance

Frequency

Efficiency

Linearity

Symbol

Backside Paddle = Ground

Gain

IRL

ESD

Protection

= 28.0V, I

Parameter

Frequency of Operation

3 Watt CW, 902-928 MHz

3 Watt CW, 2110-2170 MHz

Drain Efficiency at 3 Watt CW , 915MHz

Drain Efficiency at 3 Watt CW , 2140MHz

Input Return Loss, 3 Watt Output Power, 915MHz

Input Return Loss, 3 Watt Output Power, 2140 MHz

1dB Compression (P

ACP at 0.3 Watt output, 2140MHz, 10 MHz carrier separation,

3GPP2, Test model 1, 64 DPCH, 67% Clipping,

PAR= 9.3 @ 0.01% CCDF

IM3 at 0.3 Watt, 2140MHz output, 10 MHz carrier separation,

3GPP2, Test model 1, 64 DPCH, 67% Clipping,

PAR= 9.3 @ 0.01% CCDF

Thermal Resistance (Junction-to-Case)

Order IMD at 3 Watt PEP (Two Tone), 915MHz

Order IMD at 3 Watt PEP (Two Tone), 2140MHz

= 50mA, T

1dB

Flange

), 915 MHz

), 2140 MHz

= 25ºC

Phone: (800) SMI-MMIC

SLD-1026Z

3 Watt Discrete LDMOS Device

Plastic Surface Mount Package

Product Features

•

Applications

•

3 Watt Output P

Single Polarity Supply Voltage

High Gain: 19 dB at 915 MHz

High Efficiency: 44% at 3W CW

XeMOS II LDMOS

Proprietary Low Thermal Resistance Package

Integrated ESD Protection, Class 1B

Base Station PA driver

Repeaters

RFID

Military Communication

GSM / EDGE / CDMA / WCDMA

Proprietary SOF-26 Package

1dB

ºC/W

MHz

Watt

Unit

dBc

Min

http://www.sirenza.com

Typ

-12

-28

3.5

3.0

-48

-47

EDS-104157 Rev F

Preliminary

RoHS Compliant

Green

2700

Max

Package

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