SLD431S Sony, SLD431S Datasheet

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SLD431S

Manufacturer Part Number
SLD431S
Description
20W Array Laser Diode
Manufacturer
Sony
Datasheet
Description
array structure, which achieves 20W high power.
Features
• High power
• Array structure
• Open package
Applications
Structure
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature (Tc) Topr
• Storage temperature
• Storage humidity
Operating Lifetime
Warranty
The SLD431S is a high power laser diode with an
Recommended optical power output: Po = 20W
Solid state laser excitation
GaAlAs quantum well structure laser diode
MTTF 10,000H (effective value) at Po = 20W, Tc = 25°C
This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is
shoter.
Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if
the analysis results show that the product failed due to material or manufacturing defects on the part of Sony,
the product shall be replaced free of charge.
The lifetime is defined as the time when operating current of rated output is 1.2 times of that of shipment.
Laser diodes naturally have differing lifetimes which follow a Weibull distribution.
20W Array Laser Diode
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
(Tc: Thermistor hole temperature)
Pomax
V
Tstg
No dew condensation
R
LD
–10 to +30
–40 to +85
22
2
– 1 –
°C
°C
W
V
SLD431S
M-S006
www.DataSheet4U.com
E02306B46

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SLD431S Summary of contents

Page 1

... Array Laser Diode Description The SLD431S is a high power laser diode with an array structure, which achieves 20W high power. Features • High power Recommended optical power output 20W • Array structure • Open package Applications Solid state laser excitation Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25° ...

Page 2

... Angle Differential efficiency (Tc = 25°C, Tc: thermistor hole temperature) Symbol Conditions Ith Iop Po = 20W Vop Po = 20W 20W 20W (FWHM 20W // 20W // Po = 20W D – 2 – SLD431S www.DataSheet4U.com Min. Typ. Max. Unit — — — 1.9 2.5 V 805 — 811 nm — ...

Page 3

... LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation AVOID EXPOSURE 6-7-35 Kitashinagawa, Laser radiation is Shinagawa-ku,Tokyo OVER 1 W emitted from this 600 - 950 nm 141-0001 Japan aperture. – 3 – SLD431S www.DataSheet4U.com LASER DIODE ...

Page 4

... Package Outline Unit SONY CODE EIAJ CODE JEDEC CODE M-S006 3-Cross-Recessed Head Machine Screws (M2) 17.8 5.5 2- 3.2 10 ± 0 CHIP M-S006 PACKAGE MASS – 4 – SLD431S www.DataSheet4U.com LD (–) LD (+) 2DEPTH4 2.7 4.7 ± 0.1 5.85 7.85 18.36g Sony Corporation ...

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