BFQ67 Philips Semiconductors, BFQ67 Datasheet - Page 2

• Manufacturer Part Number: BFQ67
• Description: NPN 8 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
QUICK REFERENCE DATA
Note
1. T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1998 Aug 27
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
stg
j
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 8 GHz wideband transistor
UM
s
s
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral
power gain
noise figure
PARAMETER
PARAMETER
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
PINNING
PIN
1
2
3
open emitter
open base
T
I
I
I
I
open emitter
open base
open collector
T
C
C
C
C
s
s
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
97 C; note 1
97 C; note 1
base
emitter
collector
DESCRIPTION
CE
CONDITIONS
CONDITIONS
CE
CE
CE
2
= 8 V; f = 1 GHz
= 5 V
= 8 V
= 8 V; f = 1 GHz
alfpage
Marking code: V2p.
60
MIN.
65
MIN.
Top view
1
Fig.1 SOT23.
100
8
14
1.3
TYP.
Product specification
20
10
2.5
50
300
+150
175
MAX.
3
20
10
50
300
MAX.
MSB003
BFQ67
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT