2N1131L Microsemi, 2N1131L Datasheet
2N1131L
Manufacturer Part Number
2N1131L
Description
LOW POWER PNP SILICON TRANSISTOR
Manufacturer
Microsemi
Datasheet
1.2N1131L.pdf
(3 pages)
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
Devices
2N1131
2N1131L
MAXIMUM RATINGS
1)
2)
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Temperature Range
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
V
V
V
I
I
V
C
C
CE
CB
CB
Derate linearly 3.4 mW/
Derate linearly 11.4 mW/
EB
= 10 mAdc
= 10 Adc
= 50 Vdc, R
= 50 Vdc
= 30 Vdc
= 5.0 Vdc
BE
Ratings
10 ohms
Characteristics
0
C for T
0
C for T
@ T
@ T
A
A
C
C
= +25
= +25
+25
+25
A
0
0
0
C
= 25
0
C
C
C
(2)
(1)
0
C unless otherwise noted)
2N1132
2N1132L
Symbol
T
V
V
V
op
P
CEO
CBO
EBO
I
C
,
T
T
j
-65 to +200
All Units
V
V
600
Symbol
5.0
0.6
2.0
40
50
(BR)CEO
(BR)CBO
I
I
I
CBO
EBO
CER
TECHNICAL DATA
Units
mAdc
Vdc
Vdc
Vdc
Min.
W
W
C
Max.
*See appendix A for
package outline
100
1.0
40
50
10
10
2N1311L, 2N1312L
Qualified Level
2N1131, 2N1132
JANTX
TO-39*
TO-5*
JAN
Page 1 of 2
mAdc
Unit
Vdc
Vdc
Adc
Adc
120101
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2N1131L Summary of contents
Page 1
... LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ Operating & Storage Temperature Range 0 1) Derate linearly 3.4 mW/ C for Derate linearly 11.4 mW/ C for T ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics (3) ON CHARACTERISTICS Forward Current Transfer Ratio I = 150 mAdc Vdc 5.0 mAdc Vdc C CE Collector-Emitter Saturation Voltage I = 150 mAdc ...
Page 3
...