PBSS4140T Philips Semiconductors, PBSS4140T Datasheet - Page 3

• Manufacturer Part Number: PBSS4140T
• Description: 40 V/ 1A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2004 Mar 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
40 V, 1A
NPN low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction
to ambient
CEsat
PARAMETER
PARAMETER
(BISS) transistor
open emitter
open base
open collector
T
T
in free air; note 1
in free air; note 2
amb
amb
25 C; note 1
25 C; note 2
CONDITIONS
CONDITIONS
3
65
65
MIN.
TYPICAL
417
278
40
40
5
1
2
1
300
450
+150
150
+150
PBSS4140T
Product specification
MAX.
UNIT
V
V
V
A
A
A
mW
mW
K/W
K/W
C
C
C
2
2
UNIT
.
.