PBSS5240T Philips Semiconductors, PBSS5240T Datasheet - Page 4

• Manufacturer Part Number: PBSS5240T
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
2004 Jan 15
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
BEO
T
FE
CEsat
BEsat
BE(on)
CEsat
c
40 V, 2 A
PNP low V
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
CEsat
PARAMETER
(BISS) transistor
V
V
V
V
I
I
I
I
I
note 1
I
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CB
I
I
I
I
= 100 mA; I
= 500 mA; I
= 750 mA; I
= 1 A; I
= 2 A; I
= 500 mA; I
= 2 A; I
= 100 mA; V
C
C
C
C
= 4 V; I
= 30 V; I
= 30 V; I
= 2 V
= 2 V; I
= 10 V; I
= 100 mA
= 500 mA
= 1 A
= 2 A
CONDITIONS
4
B
B
B
C
= 50 mA
= 200 mA
= 200 mA
C
E
E
E
= 0
= 100 mA
B
B
B
B
= 0
= 0; T
= I
CE
= 1 mA
= 50 mA
= 15 mA
= 50 mA;
e
= 10 V;
= 0;
j
= 150 C
300
260
210
100
100
MIN.
450
350
290
180
160
200
23
55
70
140
140
240
TYP.
PBSS5240T
Product specification
<220
28
MAX.
100
50
100
100
110
225
225
350
1.1
0.75
nA
nA
mV
mV
mV
mV
mV
m
V
V
MHz
pF
UNIT
A