PBSS5350X Philips Semiconductors, PBSS5350X Datasheet - Page 6

• Manufacturer Part Number: PBSS5350X
• Description: 50 V/ 3 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Nov 21
I
I
I
h
V
R
V
V
f
C
SYMBOL
j
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
= 25 C unless otherwise specified.
CEsat
c
50 V, 3 A
PNP low V
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
f = 100 MHz
V
V
V
V
V
I
I
I
I
I
I
I
I
V
I
V
C
C
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CB
I
I
I
I
I
= 0.5 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 100 mA; V
C
C
C
C
C
= 50 V; I
= 50 V; I
= 50 V; V
= 5 V; I
= 2 V
= 2 V; I
= 10 V; I
= 0.1 A
= 0.5 A
= 1 A; note 1
= 2 A; note 1
= 3 A; note 1
B
B
B
B
B
B
B
CONDITIONS
6
= 50 mA
= 100 mA
= 200 mA; note 1
= 300 mA; note 1
= 200 mA; note 1
= 100 mA
= 300 mA; note 1
C
B
C
E
E
E
= 0
= 50 mA
= 1 A
BE
= 0
= 0; T
= I
CE
= 0
e
= 5 V;
= 0; f = 1 MHz
j
= 150 C
200
200
200
130
80
100
MIN.
1.1
90
TYP.
PBSS5350X
Product specification
450
135
35
MAX.
100
50
100
100
90
180
320
270
390
1.1
1.2
nA
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
MHz
pF
UNIT
A