IMH20 Rohm, IMH20 Datasheet - Page 2

• Manufacturer Part Number: IMH20
• Description: General purpose (dual digital transistors)
• Manufacturer: Rohm

Transistors
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Output on resistoance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta = 25°C)
200mW per element must not be exceeded.
Electrical characteristics (Ta = 25°C)
Transition frequency of the device
Electrical characteristic curves
500
100
200
50
20
10
1k
5
2
1
Fig.1 DC current gain vs. collector
1m
COLLECTOR CURRENT : I
Parameter
2m
current
5m 10m 20m
Parameter
Ta=100°C
−40°C
25°C
50m 100m 200m
C
(A)
V
CE
= 5V
500m
Symbol
V
V
V
Tstg
Pc
I
Tj
CBO
CEO
EBO
C
Symbol
BV
BV
BV
V
Ron
I
I
h
CE(sat)
CBO
EBO
R
f
FE
T
500m
100m
CBO
CEO
EBO
200m
50m
1
20m
10m
5m
2m
1m
Fig.2 Collector-emitter saturation
1
1m
300 (TOTAL)
Min.
1.64
−55 to +150
100
COLLECTOR CURRENT : I
30
15
5
−
−
−
−
−
2m
voltage vs. collector current
Ta=100°C
Limits
600
150
30
15
−40°C
5
25°C
5m 10m 20m
0.65
Typ.
250
200
2.2
40
−
−
−
−
−
Max.
2.86
600
50m 100m 200m
0.5
0.5
80
−
−
−
−
−
Unit
mW
mA
°C
°C
C
V
V
V
(A)
I
C
/I
MHz
Unit
mV
B
µA
µA
kΩ
Ω
= 20
V
V
V
−
500m
∗
I
I
I
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
=50µA
=1mA
=50µA
/I
=50mA , V
B
=4V
=20V
=10V, I
=7V, I
=50mA/2.5mA
500m
200m
100m
Fig.3 Output on resistance vs. input voltage
100
50
10
20
5
2
1
100m 200m
E
=1kΩ, f=1KHz
E
= −50mA, f=100MHz
CE
500m
Conditions
=5V
INPUT VOLTAGE : V
1
−
2
5
Ta=25°C
f= 1kHz
R
h
FE
L
= 1kΩ
= 250(5V/50mA)
10
I
IMH20
(V)
20
50
2/3
100
∗