DXTD882 Dc Components, DXTD882 Datasheet
DXTD882
Manufacturer Part Number
DXTD882
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DXTD882.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Classification of h
1 = Base
2 = Collector
3 = Emitter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Designed for the output stage of 0.75W audio,
voltage regulator, and relay driver.
Electrical Characteristics
(Ratings at 25
Range
Rank
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
100~200
Q
R
o
C ambient temperature unless otherwise specified)
(1)
DC COMPONENTS CO., LTD.
FE2
160~320
P
DISCRETE SEMICONDUCTORS
(1)
250~500
(T
Symbol
V
V
V
T
(1)
A
P
=25
E
CBO
CEO
EBO
T
STG
I
C
D
J
o
C)
Symbol
V
V
BV
BV
BV
h
h
I
I
CE(sat)
BE(sat)
C
CBO
EBO
FE1
FE2
-55 to +150
f
CBO
CEO
EBO
T
ob
Rating
+150
1.5
40
30
5
3
Min
100
40
30
30
5
-
-
-
-
-
-
Unit
o
o
W
V
V
V
A
C
C
Typ
90
45
-
-
-
-
-
-
-
-
-
.167(4.25)
.159(4.05)
.020(0.51)
.014(0.36)
Max
500
0.5
1
1
2
-
-
-
-
-
-
MHz
Unit
Dimensions in inches and (millimeters)
pF
1
V
V
V
V
V
-
-
A
A
.066(1.70)
.059(1.50)
.120(3.04)
.181(4.60)
.173(4.40)
.117(2.96)
I
I
I
V
V
I
I
I
I
I
V
2
C
C
E
C
C
C
C
C
.060(1.52)
.058(1.48)
CB
EB
CB
=10 A, I
=100 A, I
=1mA, I
=2A, I
=2A, I
=20mA, V
=1A, V
=0.1A, V
=30V, I
=3V, I
=10V, f=1MHz, I
Test Conditions
B
B
3
CE
=0.2A
=0.2A
B
B
C
=0
CE
=0
E
=2V
DXTD882
=0
E
CE
=0
=0
=5V, f=100MHz
.102(2.60)
.095(2.40)
=2V
E
.016(0.41)
.014(0.35)
=0
SOT-89
.063(1.60)
.055(1.40)
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