BU4507 Philips Semiconductors, BU4507 Datasheet - Page 4

• Manufacturer Part Number: BU4507
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
August 1998
Silicon Diffused Power Transistor
30
20
10
IC / A
IBend
-VBB
0
100
Fig.9. Reverse bias safe operating area. T
100
10
0.001
1
hFE
Fig.7. High and low DC current gain.
VCE = 5V
Fig.8. Test Circuit RBSOA.
0.01
LB
VCE / V
LC
0.1
VCC
T.U.T.
Ths = 25 C
1
Ths = 85 C
IC / A
1000
BU4507AF
j
1500
BU2507
10
T
CFB
jmax
VCL
4
Fig.10. Typical collector-emitter saturation voltage.
Fig.11. Typical base-emitter saturation voltage.
Fig.12. Typical collector storage and fall time.
1.2
1.1
0.9
0.8
0.7
0.6
10
0.01
0.1
8
6
4
2
0
10
1
0
1
0
0.1
ts/tf / us
VBEsat / V
VCEsat / V
I
0.5
0.5
C
Ths = 25 C
Ths = 85 C
=4 A; T
1
1
1
j
= 85˚C; f = 16kHz
1.5
1.5
IC = 4 A
ts
tf
IC/IB = 5
10
Product specification
2
2
Ths = 25 C
Ths = 85 C
Ths = 85 C
ICsat = 4 A
Freq = 16 kHz
BU4507AF
BU4507AF/X/Z
BU4507AF/X/Z
2.5
2.5
IC / A
IB / A
IB / A
Rev 1.100
100
3
3