BU4507AZ Philips Semiconductors, BU4507AZ Datasheet - Page 2

• Manufacturer Part Number: BU4507AZ
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
August 1998
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
SYMBOL
I
I
I
V
BV
V
V
h
h
hs
SYMBOL
C
t
t
t
t
CES
CES
EBO
s
f
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
isol
c
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages I
Base-emitter saturation voltage
DC current gain
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (56 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
2
CONDITIONS
waveform;
R.H.
CONDITIONS
V
V
T
V
I
L = 25 mH
I
I
I
I
CONDITIONS
I
I
(I
I
(I
B
B
C
C
C
C
E
Csat
Csat
j
B2
B2
BE
BE
EB
= 0 A; I
= 1 mA
= 0 A; V
= 4 A; I
= 4 A; I
= 100 mA; V
= 4 A; V
= 125 ˚C
65% ; clean and dustfree
= -2.0 A)
= -2.1 A)
= 0 V; V
= 0 V; V
= 6 V; I
= 4.0 A;I
= 4.0 A;I
2
C
B
B
CB
CE
= 100 mA;
= 1 A
= 1 A
C
CE
CE
B1
B1
= 0 A
= 10 V; f = 1 MHz
= 5 V
= V
= V
CE
= 0.8 A
= 0.8 A
= 5 V
CESMmax
CESMmax
MIN.
MIN.
0.84
800
7.5
4.2
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
13.5
0.92
0.30
0.21
5.7
3.8
2.4
10
12
68
-
-
-
-
-
Product specification
BU4507AZ
MAX.
MAX.
MAX.
2500
1.01
0.45
100
1.0
2.0
3.0
7.3
4.6
-
-
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
mA
mA
pF
pF
V
V
V
V
V
A
s
s
s
s