BU4507DZ Philips Semiconductors, BU4507DZ Datasheet - Page 3

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BU4507DZ

Manufacturer Part Number
BU4507DZ
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
January 1999
Silicon Diffused Power Transistor
V
I
Fig.3. Definition of anti-parallel diode V
F
F
Fig.1. Switching times waveforms (16 kHz).
VCE
IC
IB
IC
IB
Fig.2. Switching times definitions.
10%
DIODE
20us
t
fr
IB1
TRANSISTOR
5 V
ts
64us
26us
tf
10 %
90 %
ICsat
V
- IB2
F
IB1
I
ICsat
IB2
F
fr
t
t
time
time
and t
t
t
t
V
fr
.
fr
3
IBend
-VBB
100
100
10
10
1
0.01
1
0.01
hFE
hFE
Fig.5. High and low DC current gain.
Fig.6. High and low DC current gain.
Fig.4. Switching times test circuit .
VCE = 5V
VCE = 1V
LB
0.1
0.1
D.U.T.
Rbe
Product specification
1
1
+ 150 v nominal
adjust for ICsat
Lc
Cfb
BU4507DZ
Ths = 25 C
Ths = 85 C
Ths = 25 C
Ths = 85 C
BU4507DF/X/Z
IC / A
IC / A
Rev 1.000
10
10

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