BU4515AF Philips Semiconductors, BU4515AF Datasheet

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... T 25 ˚ 6 1 16kHz f = 64kHz 16kHz Csat I = 5A;f = 64kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU4515AF TYP. MAX. UNIT - 1500 V - 800 3 0.36 0 ...

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... 100 mA CONDITIONS I = 6.0 A;I = 1.2 A Csat -3 5.0 A;I = 1.0 A Csat -3 Product specification BU4515AF MIN. TYP. MAX. UNIT - - 2500 - 22 - MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13.5 - 800 - - - - 3.0 0.85 0.94 1.03 - ...

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... VCEOsust . CEOsust hFE ICsat 100 t IB1 10 t IB2 1 t 0.01 Fig.6. High and low DC current gain. 3 Product specification BU4515AF ICsat IB1 - IB2 Fig.4. Switching times definitions. + 150 v nominal adjust for ICsat Lc LB T.U.T. Cfb Fig.5. Switching times test circuit . ...

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... Fig.11. Normalised power dissipation. Ths = 25C 10 Ths = 85C 0.1 0.01 0.001 3 4 IB/A 4 Product specification BU4515AF ts/tf/us ICsat = 6A Ths 85 C Freq = 16kHz 1 1 85˚ 16kHz C j Normalised Power Derating PD% with heatsink compound 100 120 Ths / C ...

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... Philips Semiconductors Silicon Diffused Power Transistor Ic(sat) ( Frequency (kHz) Fig.13. I during normal running vs. frequency of Csat operation for optimum performance June 1999 80 100 5 Product specification BU4515AF Rev 1.000 ...

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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". June 1999 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU4515AF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.000 o 45 ...

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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1999 7 Product specification BU4515AF Rev 1.000 ...