BU4515AX Philips Semiconductors, BU4515AX Datasheet

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BU4515AX

Manufacturer Part Number
BU4515AX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
PINNING - SOT399
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
June 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
CONDITIONS
V
T
I
f = 16kHz
f = 64kHz
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
1 2 3
C
Csat
Csat
hs
hs
1
BE
BE
= 6.0 A; I
= 0 V
= 0 V
= 6A; f = 16kHz
= 5A;f = 64kHz
25 ˚C
25 ˚C
B
= 1.5 A
SYMBOL
b
TYP.
TYP.
MIN.
0.36
0.23
Product specification
-55
6.0
5.0
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU4515AX
MAX.
MAX.
MAX.
1500
e
1500
c
800
800
150
150
3.0
0.5
7.5
2.8
20
45
20
45
9
9
5
6
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
A
A
A
A
A
s
s

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BU4515AX Summary of contents

Page 1

... T 25 ˚ 6 1 16kHz f = 64kHz 16kHz Csat I = 5A;f = 64kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU4515AX TYP. MAX. UNIT - 1500 V - 800 3 0.36 0.5 s 0.23 ...

Page 2

... 100 mA CONDITIONS I = 6.0 A;I = 1.2 A Csat -3 5.0 A;I = 1.0 A Csat -3 Product specification BU4515AX MIN. TYP. MAX. UNIT - - 2500 - 22 - MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13.5 - 800 - - - - 3.0 0.85 0.94 1.03 - ...

Page 3

... VCEOsust . CEOsust hFE ICsat 100 t IB1 10 t IB2 1 t 0.01 Fig.6. High and low DC current gain. 3 Product specification BU4515AX ICsat IB1 - IB2 Fig.4. Switching times definitions. + 150 v nominal adjust for ICsat Lc LB T.U.T. Cfb Fig.5. Switching times test circuit . ...

Page 4

... Fig.11. Normalised power dissipation. Ths = 25C 10 Ths = 85C 0.1 0.01 0.001 3 4 IB/A 4 Product specification BU4515AX ts/tf/us ICsat = 6A Ths 85 C Freq = 16kHz 1 1 85˚ 16kHz C j Normalised Power Derating PD% with heatsink compound 100 120 Ths / C ...

Page 5

... Philips Semiconductors Silicon Diffused Power Transistor Ic(sat) ( Frequency (kHz) Fig.13. I during normal running vs. frequency of Csat operation for optimum performance June 1999 80 100 5 Product specification BU4515AX Rev 1.000 ...

Page 6

... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 1999 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 6 Product specification BU4515AX 5.8 max 3.0 3 0.95 max 3.3 Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1999 7 Product specification BU4515AX Rev 1.000 ...

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