BU4523AF Philips Semiconductors, BU4523AF Datasheet

no-image

BU4523AF

Manufacturer Part Number
BU4523AF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
May 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 16 kHz
f = 70 kHz
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
Csat
Csat
hs
hs
1
BE
BE
= 8 A; I
2
= 0 V
= 0 V
= 8 A; f = 16 kHz
= 6.5 A; f = 70 kHz
25 ˚C
3
25 ˚C
B
= 2 A
SYMBOL
b
TYP.
TYP.
MIN.
0.14
Product specification
-55
6.5
0.3
35
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU4523AF
MAX.
MAX.
MAX.
1500
e
1500
c
800
800
150
150
3.0
0.4
2.8
11
29
45
11
29
10
45
7
7
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
A
A
A
A
A
s
s

Related parts for BU4523AF

BU4523AF Summary of contents

Page 1

... kHz kHz kHz Csat kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU4523AF TYP. MAX. UNIT - 1500 V - 800 3 6 ...

Page 2

... CONDITIONS I = 8.0 A;I = 1.6 A Csat 6.5 A;I = 1.3 A Csat -3 Product specification BU4523AF MIN. TYP. MAX. UNIT - - 2500 - 22 - MIN. TYP. MAX. UNIT - - 1 2 100 7.5 12.5 - 800 - - - - 3.0 0.85 0.95 1 ...

Page 3

... Vertical 1R VCE . Fig.4. Switching times waveforms (70 kHz). CEOsust min VCEOsust . CEOsust ICsat t IB1 t IB2 IBend -VBB t 3 Product specification BU4523AF ICsat TRANSISTOR DIODE IB1 2.5us 7.1us IB2 14.2us ICsat IB1 - IB2 Fig.5. Switching times definitions. + 150 v nominal adjust for ICsat ...

Page 4

... Product specification BU4523AF VBEsat / V BU4523AF/X Ths = 25 C Ths = 6 BU4523AF/X 16kHz ts/ ICsat = 8 A Ths = 85 C Freq = 16 kHz 85˚ 16kHz C j Normalised Power Derating PD% with heatsink compound ...

Page 5

... T 1E+00 Fig.15. Reverse bias safe operating area VCL 2 1 CFB 0 Fig.16 Product specification BU4523AF 1000 VCE / V Ic(sat) ( Horizontal frequency (kHz) during normal running vs. frequency of Csat operation for optimum performance BU2523 1500 T ...

Page 6

... Fig.17. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 1998 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU4523AF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.100 o 45 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 7 Product specification BU4523AF Rev 1.100 ...

Related keywords