BU4525DF Philips Semiconductors, BU4525DF Datasheet

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BU4525DF

Manufacturer Part Number
BU4525DF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television receivers
and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a
very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
1 Turn-off current.
July 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 16 kHz
f = 70 kHz
I
I
f = 70 kHz
CONDITIONS
V
T
C
F
Csat
hs
hs
1
BE
BE
= 9.0 A
= 9.0 A; I
2
= 0 V
= 0 V
= 9.0 A;f = 16 kHz
25 ˚C
3
25 ˚C
B
= 2.25 A
SYMBOL
b
Objective specification
TYP.
MIN.
t.b.f
t.b.f
-55
9.0
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU4525DF
MAX.
MAX.
1500
1500
e
c
0.55
800
t.b.f
800
150
150
3.0
2.2
12
30
45
12
30
12
45
8
7
-
-
Rev 1.000
UNIT
UNIT
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
V
A
A
A
A
A
s
s

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BU4525DF Summary of contents

Page 1

... CONDITIONS ˚ 9 2. kHz kHz 9.0 A kHz Csat kHz PIN CONFIGURATION case CONDITIONS ˚ Objective specification BU4525DF TYP. MAX. UNIT - 1500 V - 800 3 t.b 2.2 V 0.4 0.55 s t.b.f t.b.f ...

Page 2

... 9.0 A;I = 2.25A 1 9 CONDITIONS MHz 9.0 A;I = 1.8 A Csat -4 t.b.f Csat 2 Objective specification BU4525DF TYP. MAX. UNIT - 2.8 K K/W MIN. TYP. MAX. UNIT - - 2500 - 22 - MIN. TYP. MAX. UNIT - - 1 2.0 mA 7.5 13 800 ...

Page 3

... Fig.1. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 3 Objective specification BU4525DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.000 o 45 ...

Page 4

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 4 Objective specification BU4525DF Rev 1.000 ...

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