BU4525DL Philips Semiconductors, BU4525DL Datasheet

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BU4525DL

Manufacturer Part Number
BU4525DL
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BU4525DL.pdf (4 pages)
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers
and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a
very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT430
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
1 Turn-off current.
July 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
V
I
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
C
CM
Csat
f
C
CM
B
BM
heat collector
sink
PIN
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
I
f = 16 kHz
f = 70 kHz
I
f = 70 kHz
CONDITIONS
V
T
C
F
Csat
2
hs
hs
1
BE
BE
= 9.0 A
= 9.0 A; I
3
= 0 V
= 0 V
= 9.0 A;f = 16 kHz
25 ˚C
25 ˚C
B
= 2.25 A
SYMBOL
b
TYP.
MIN.
Product specification
t.b.f
t.b.f
-55
9.0
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU4525DL
MAX.
MAX.
1500
1500
e
c
0.55
800
125
t.b.f
800
125
150
150
3.0
2.2
14
30
14
30
12
8
7
-
-
Rev 1.000
UNIT
UNIT
˚C
˚C
W
W
V
V
A
A
V
V
A
A
V
V
A
A
A
A
A
s
s

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BU4525DL Summary of contents

Page 1

... CONDITIONS ˚ kHz kHz I = 9.0 A kHz Csat kHz PIN CONFIGURATION CONDITIONS ˚ Product specification BU4525DL TYP. MAX. UNIT - 1500 V - 800 125 2 t.b 0.4 0.55 s t.b.f t ...

Page 2

... 9.0 A;I = 2.25A 9.0 A;I = 2.25A 1 9 CONDITIONS MHz 9.0 A;I = 1.8 A Csat -4 t.b.f Csat 2 Objective specification BU4525DL TYP. MAX. UNIT - 1 K K/W MIN. TYP. MAX. UNIT - - 1 2.0 mA 7.5 13 800 - - - - 3.0 0.96 1.01 1. 4.2 5.8 7 ...

Page 3

... Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 20.5 - 20.7 July 1998 19.9 3.5 3.7 26.0 2.4 5.46 5.46 Fig.1. SOT430; pin 2 connected to mounting base. 3 Objective specification BU4525DL 6.2 4.1 8.5 1.9 seating plane 2.4 3.0 1.3 5.0 3.0 0.8 2.7 Rev 1.000 ...

Page 4

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 4 Objective specification BU4525DL Rev 1.000 ...

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