BU4525DX Philips Semiconductors, BU4525DX Datasheet

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BU4525DX

Manufacturer Part Number
BU4525DX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BU4525DX.pdf (4 pages)
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT399
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
1 Turn-off current.
July 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
DESCRIPTION
PIN CONFIGURATION
1
case
CONDITIONS
V
T
I
f = 16 kHz
f = 70 kHz
I
I
f = 70 kHz
CONDITIONS
V
T
1 2 3
C
F
Csat
hs
hs
1
BE
BE
= 9.0 A
= 9.0 A; I
= 0 V
= 0 V
= 9.0 A;f = 16 kHz
25 ˚C
25 ˚C
B
= 2.25 A
SYMBOL
b
Objective specification
TYP.
MIN.
t.b.f
t.b.f
-55
9.0
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU4525DX
MAX.
MAX.
1500
1500
e
c
0.55
800
t.b.f
800
150
150
3.0
2.2
12
30
45
12
30
12
45
8
7
-
-
Rev 1.000
UNIT
UNIT
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
V
A
A
A
A
A
s
s

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BU4525DX Summary of contents

Page 1

... CONDITIONS ˚ 9 2. kHz kHz 9.0 A kHz Csat kHz PIN CONFIGURATION case CONDITIONS ˚ Objective specification BU4525DX TYP. MAX. UNIT - 1500 V - 800 3 t.b 2.2 V 0.4 0. ...

Page 2

... 9.0 A;I = 2.25A 1 9 CONDITIONS MHz 9.0 A;I = 1.8 A Csat -4 t.b.f Csat 2 Objective specification BU4525DX TYP. MAX. UNIT - 2.8 K K/W MIN. TYP. MAX. UNIT - - 2500 - 22 - MIN. TYP. MAX. UNIT - - 1 2.0 mA 7.5 13 800 ...

Page 3

... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.1. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 3 Objective specification BU4525DX 5.8 max 3.0 3 0.95 max 3.3 Rev 1.000 ...

Page 4

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 4 Objective specification BU4525DX Rev 1.000 ...

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