NJT4030P ON Semiconductor, NJT4030P Datasheet

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NJT4030P

Manufacturer Part Number
NJT4030P
Description
Bipolar Power Transistors PNP Silicon
Manufacturer
ON Semiconductor
Datasheet

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NJT4030P
Product Preview
Bipolar Power Transistors
PNP Silicon
Features
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. P2
Collector −Emitter Sustaining Voltage −
High DC Current Gain −
Low Collector −Emitter Saturation Voltage −
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
These are Pb−Free Devices
V
h
V
FE
CEO(sus)
CE(sat)
Machine Model, C; > 400 V
= 200 (Min) @ I
= 100 (Min) @ I
= 0.200 Vdc (Max) @ I
= 0.500 Vdc (Max) @ I
= 40 Vdc (Min) @ I
Preferred Device
C
C
= 1.0 Adc
= 3.0 Adc
C
= 10 mAdc
C
C
= 1.0 Adc
= 3.0 Adc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
40 VOLTS, 2.0 WATTS
A
Y
W
4030P
G
ORDERING INFORMATION
PNP TRANSISTOR
3.0 AMPERES
http://onsemi.com
PIN ASSIGNMENT
CASE 318E
Top View Pinout
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
SOT−223
STYLE 1
B 1
Schematic
B
1
C
Publication Order Number:
4
C
C 2,4
2
E 3
E
3
1
MARKING
DIAGRAM
4030PG
NJT4030P/D
AYW

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NJT4030P Summary of contents

Page 1

... PIN ASSIGNMENT Top View Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: NJT4030P/D ...

Page 2

... ORDERING INFORMATION Device NJT4030PT1G NJT4030PT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NJT4030P Rating Characteristic Package SOT−223 (Pb−Free) SOT−223 (Pb− ...

Page 3

... T FE test 2.5 2.0 1.5 1.0 0 NJT4030P (T = 25°C unless otherwise noted) C Î Î Î Î Î Symbol Î Î Î Î Î Î Î Î Î Î V Î Î Î Î Î CEO(sus) Î Î Î Î Î Î Î Î Î Î ...

Page 4

... I , COLLECTOR CURRENT (A) C Figure 4. Collector−Emitter Saturation Voltage 0.1 0.5 A 0.1 A 0.01 1.0E−04 1.0E−03 1.0E− BASE CURRENT (A) B Figure 6. Collector Saturation Region NJT4030P TYPICAL CHARACTERISTICS 700 600 500 400 300 200 100 0.001 150° 25°C − ...

Page 5

... Figure 10. Input Capacitance 200 T = 25°C 180 MHz test 160 140 120 100 0.001 0. COLLECTOR CURRENT (A) C Figure 12. Current−Gain Bandwidth Product NJT4030P TYPICAL CHARACTERISTICS 1.2 1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.001 Figure 9. Base−Emitter Saturation Voltage 100 T = 25°C ...

Page 6

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NJT4030P/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° ...

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