CTA2 Diodes Incorporated, CTA2 Datasheet - Page 2

• Manufacturer Part Number: CTA2
• Description: COMPLEX TRANSISTOR ARRAY
• Manufacturer: Diodes Incorporated

DS30295 Rev. A-2
Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element
Notes:
@ T
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element
@ T
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
OFF CHARACTERISTICS (Note 2)
ON CHARACTERISTICS (Note 2)
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
2. Short duration pulse test used to minimize self-heating effect.
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
Symbol
R
V
V
V
Symbol
V
V
BV
V
t
t
D(OFF)
DS (ON)
I
I
C
D(ON)
(BR)CBO
(BR)CEO
(BR)EBO
C
CE(SAT)
BE(SAT)
GS(th)
g
C
DSS
GSS
I
C
h
C
h
CEX
h
I
h
h
FS
oss
DSS
iss
rss
BL
f
t
t
t
t
FE
oe
cb
eb
re
fe
T
d
s
ie
r
f
2 of 3
Min
-0.8
-50
.05
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
0.75
Min
100
250
6.0
1.0
0.1
1.0
60
40
¾
¾
20
40
80
40
¾
¾
¾
¾
40
¾
¾
¾
¾
Typ
10
18
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Max
0.40
0.75
0.95
100
100
300
500
225
1.2
6.5
8.0
30
15
30
15
20
30
¾
¾
¾
¾
¾
¾
¾
¾
Max
-100
±10
-2.0
-15
-60
¾
10
¾
45
25
12
¾
¾
x 10
MHz
Unit
Unit
µA
µA
nA
nA
kW
pF
pF
pF
nA
nA
pF
pF
mS
ns
ns
¾
¾
ns
ns
ns
ns
V
V
W
S
V
V
V
V
V
-4
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
GS
DS
DS
DS
GS
DS
GS
DS
DS
DD
GEN
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
I
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= -50V, V
= -50V, V
= -25V, V
= -25V, I
= 0V, I
= ±20V, V
= V
= -5V, I
= -25V, V
= -30V, I
= 100mA, I
= 1.0mA, I
= 100mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 50W, V
= I
= 35V, V
= 35V, V
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 10V, I
= 10V, I
= 30V, I
= 30V, I
GS
Test Condition
B2
= 2.0V, I
, I
Test Condition
D
D
= 15mA
D
D
= -250µA
D
= 0.100A
GS
GS
GS
= -1mA
GS
DS
= 0.1A
C
= -0.27A,
C
C
C
B
C
GS
E
EB(OFF)
EB(OFF)
B
B
B
B
= 1.0mA,
= 20mA,
= 0V, T
= 0V, T
= 0V, T
= 0V
CE
CE
CE
CE
CE
= 150mA,
= 150mA,
= 0
= 0
= 0
= 0V
= 15mA
= 50mA
= 15mA
= 50mA
= -10V
B1
= 1.0V
= 1.0V
= 1.0V
= 1.0V
= 2.0V
= 15mA
= 0.4V
= 0.4V
CTA2N1P
J
J
J
= 25°C
= 125°C
= 25°C
E
C
= 0
= 0