DF654 Dynex, DF654 Datasheet

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DF654

Manufacturer Part Number
DF654
Description
Fast Recovery Diode
Manufacturer
Dynex
Datasheet
Replaces March 1998 version, DS4214-3.5
APPLICATIONS
FEATURES
VOLTAGE RATINGS
Lower voltage grades available.
CURRENT RATINGS
DF654 35
DF654 34
DF654 32
DF654 30
Double Side Cooled
Single Side Cooled (Anode side)
Symbol
Type Number
Induction Heating
A.C. Motor Drives
Inverters And Choppers
Welding
High Frequency Rectification
UPS
Double Side Cooling
High Surge Capability
Low Recovery Charge
I
I
I
I
F(RMS)
F(RMS)
F(AV)
F(AV)
I
I
F
F
Mean forward current
RMS value
Continuous (direct) forward current
Mean forward current
RMS value
Continuous (direct) forward current
Reverse Voltage
Repetitive Peak
3500
3400
3200
3000
V
V
RRM
Parameter
V
RSM
Conditions
= V
RRM
+ 100V
Half wave resistive load, T
T
T
Half wave resistive load, T
T
T
case
case
case
case
= 65
= 65
= 65
= 65
o
o
o
o
C
C
C
C
See Package Details for further information.
Conditions
Outline type code: M779b.
case
case
= 65
= 65
o
o
C
C
Fast Recovery Diode
KEY PARAMETERS
V
I
I
Q
t
F(AV)
FSM
rr
DS4214-4.0 January 2000
RRM
r
Max.
1060
960
690
600
675
440
DF654
DF654
6000A
900 C
3500V
Units
6.5 s
675A
A
A
A
A
A
A
1/7

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DF654 Summary of contents

Page 1

... Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage V RRM V DF654 35 3500 DF654 34 3400 DF654 32 3200 DF654 30 3000 Lower voltage grades available. CURRENT RATINGS Symbol Parameter Double Side Cooled I Mean forward current F(AV) I RMS value F(RMS) I Continuous (direct) forward current ...

Page 2

... DF654 SURGE RATINGS Symbol Parameter I Surge (non-repetitive) forward current FSM for fusing I Surge (non-repetitive) forward current FSM for fusing THERMAL AND MECHANICAL DATA Symbol Parameter R Thermal resistance - junction to case th(j-c) R Thermal resistance - case to heatsink th(c-h) T Virtual junction temperature ...

Page 3

... DEFINITION OF K FACTOR AND / 0. CURVES 3000 2500 2000 1500 1000 500 1.5 RA1 = 0. RA1 Measured under pulse conditions T = 25˚C j 2.0 2.5 Instantaneous forward voltage V Fig.1 Maximum (limit) forward characteristics T = 150˚C j 3.0 3.5 - (V) F DF654 3/7 ...

Page 4

... DF654 500 400 300 200 100 0 1.0 100000 10000 1000 100 1 4/7 Measured under pulse conditions T = 150˚ 25˚C j 1.25 1.5 Instantaneous forward voltage V Fig.2 Maximum (limit) forward characteristics 1ms Rate of rise of reverse current dI Fig.3 Recovered charge 1 ...

Page 5

... Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) Conditions 150˚ 100V 100 / d.c. Double side cooled 1 10 Time - (s) DF654 2000A = 1000A = 500A = 200A = 100A 1000 100 5/7 ...

Page 6

... DF654 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Recommendations for clamping power semiconductors ...

Page 7

... Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4214-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM DF654 7/7 ...

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