DF685 Dynex, DF685 Datasheet

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DF685

Manufacturer Part Number
DF685
Description
Fast Recovery Diode
Manufacturer
Dynex
Datasheet
Replaces March 1998 version, DS4303-1.3
APPLICATIONS
FEATURES
VOLTAGE RATINGS
Lower voltage grades available.
CURRENT RATINGS
DF685 45
DF685 44
DF685 43
DF685 42
DF685 41
DF685 40
Double Side Cooled
Single Side Cooled (Anode side)
Symbol
Type Number
Snubber Diode For GTO Applications
Double Side Cooling
High Surge Capability
Low Recovery Charge
I
I
I
I
F(RMS)
F(RMS)
F(AV)
F(AV)
I
I
F
F
Mean forward current
RMS value
Continuous (direct) forward current
Mean forward current
RMS value
Continuous (direct) forward current
Reverse Voltage
Repetitive Peak
4500
4400
4300
4200
4100
4000
V
V
RRM
Parameter
V
RSM
Conditions
= V
RRM
+ 100V
Half wave resistive load, T
T
T
Half wave resistive load, T
T
T
case
case
case
case
= 65
= 65
= 65
= 65
o
o
o
o
C
C
C
C
See Package Details for further information.
Conditions
Outline type code: M779b.
case
case
= 65
= 65
o
o
C
C
Fast Recovery Diode
KEY PARAMETERS
V
I
I
Q
t
F(AV)
FSM
rr
DS4303-2.0 January 2000
RRM
r
Max.
700
610
440
365
445
280
DF685
DF685
4500A
650 C
4500V
Units
445A
A
A
A
A
A
A
5 s
1/8

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DF685 Summary of contents

Page 1

... Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage V RRM V DF685 45 4500 DF685 44 4400 DF685 43 4300 DF685 42 4200 DF685 41 4100 DF685 40 4000 Lower voltage grades available. CURRENT RATINGS Symbol Parameter Double Side Cooled I Mean forward current F(AV) I RMS value F(RMS) I ...

Page 2

... DF685 SURGE RATINGS Symbol Parameter I Surge (non-repetitive) forward current FSM for fusing I Surge (non-repetitive) forward current FSM for fusing I Surge (non-repetitive) forward current FSM for fusing THERMAL AND MECHANICAL DATA Parameter Symbol ...

Page 3

... DEFINITION OF K FACTOR AND / 0. CURVES 3000 2500 2000 1500 1000 500 RA1 = 0. RA1 Measured under pulse conditions T = 150˚ 2.0 4.0 Instantaneous forward voltage V Fig. 1 Maximum (limit) forward characteristics T = 25˚C j 6.0 8.0 - (V) F DF685 3/8 ...

Page 4

... DF685 500 400 300 200 100 0 500 V FR 400 300 200 100 0 0 Fig. 3 Transient forward voltage vs rate of rise of forward current 4/8 Measured under pulse conditions T = 150˚C j 1.0 1.5 2.0 Instantaneous forward voltage V Fig. 2 Maximum (limit) forward characteristics Current waveform Voltage waveform ...

Page 5

... V = 100V 4000A 2000A 1000A 200A I = 500A 100A F 100 / Conditions 150˚ 100V 4000A 2000A 1000A 500A 200A 100A F 100 / DF685 1000 1000 5/8 ...

Page 6

... DF685 0.100 0.010 0.001 0.01 Fig. 6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) 6/8 0.1 1 Time - (s) d.c. Double side cooled 10 100 ...

Page 7

... Recommendations for clamping power semiconductors Thyristor and diode measurement with a multi-meter Use on-state characteristic TO T Cathode Ø58.5 max Ø34 nom Ø34 nom Nominal weight: 310g Clamping force: 12kN 10% Package outine type code: M779b Anode Application Note Number AN4506 AN4839 AN4853 AN5001 DF685 7/8 ...

Page 8

... DF685 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors ...

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