3N170 Calogic LLC, 3N170 Datasheet
3N170
Manufacturer Part Number
3N170
Description
N-Channel Enhancement Mode MOSFET Switch
Manufacturer
Calogic LLC
Datasheet
1.3N170.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
3N170
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
N-Channel Enhancement
Mode MOSFET Switch
3N170 / 3N171
FEATURES
PIN CONFIGURATION
1003
Low Switching Voltages
Fast Switching Times
Low Drain-Source Resistance
Low Reverse Transfer Capacitance
D
G
C,B
S
TO-72
HANDLING PRECAUTIONS
MOS field-effect transistors have extremely high input
resistance and can be damaged by the accumulation of
excess static charge. To avoid possible damage to the device
while wiring, testing, or in actual operation, follow the
procedures outlined below.
1. To avoid the build-up of static charge, the leads of the
2. Avoid unnecessary handling. Pick up devices by the case
3. Do not insert or remove devices from circuits with the
ABSOLUTE MAXIMUM RATINGS
(T
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature Range . . . . . . . . . . . . . -65
Operating Temperature Range . . . . . . . . . . . -55
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N170-71
X3N170-71
A
Derate above 25
devices should remain shorted together with a metal ring
except when being tested or used.
instead of the leads.
power on as transient voltages may cause permanent
damage to the devices.
= 25
o
C unless otherwise specified)
Package
Hermetic TO-72
Sorted Chips in Carriers
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/
CORPORATION
Temperature Range
-55
-55
o
o
C to +150
C to +150
o
o
C to +200
C to +150
o
o
C
C
o
o
o
o
C
C
C
C
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3N170 Summary of contents
Page 1
... N-Channel Enhancement Mode MOSFET Switch 3N170 / 3N171 FEATURES Low Switching Voltages Fast Switching Times Low Drain-Source Resistance Low Reverse Transfer Capacitance PIN CONFIGURATION C 1003 HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing actual operation, follow the procedures outlined below ...
Page 2
... Fall Time (Note 1) f NOTE 1: For design reference only, not 100% tested unless otherwise specified) Substrate connected to source. A MIN MAX 25 100 3N170 1.0 3N171 1.5 10 200 1000 3N170 / 3N171 UNITS TEST CONDITIONS 35V 35V, V ...