LT1167 Linear Technology, LT1167 Datasheet - Page 5

• Manufacturer Part Number: LT1167
• Description: Single Resistor Gain Programmable/ Precision Instrumentation Amplifier
• Manufacturer: Linear Technology

ELECTRICAL CHARACTERISTICS
V
SYMBOL PARAMETER
G
G/T
V
V
V
V
V
V
V
I
I
I
I
V
CMRR
PSRR
I
V
I
SR
V
The
temperature range.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be imparied.
Note 2: Does not include the effect of the external gain resistor R
Note 3: This parameter is not 100% tested.
Note 4: The LT1167AC/LT1167C are designed, characterized and expected
to meet the industrial temperature limits, but are not tested at – 40 C and
85 C. I-grade parts are guaranteed.
Note 5: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
OS
OS
B
B
S
OUT
OST
OSI
OSIH
OSO
OSOH
OSI
OSO
CM
OUT
REF
S
N
/T
/T
= 15V, V
/T
/T
denotes specifications that apply over the full specified
Gain Error
Gain Nonlinearity (Notes 2, 4)
Gain vs Temperature
Total Input Referred
Offset Voltage
Input Offset Voltage
Input Offset Voltage Hysteresis
Output Offset Voltage
Output Offset Voltage Hysteresis (Notes 3, 6)
Input Offset Drift (RTI)
Output Offset Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Supply Current
Output Voltage Swing
Output Current
Slew Rate
REF Voltage Range
CM
= 0V, – 40 C T
A
85 C, R
CONDITIONS (Note 7)
G = 1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
V
V
V
G < 1000 (Note 2)
V
(Notes 3, 6)
(Note 3)
(Note 3)
V
V
1k Source Imbalance,
V
V
V
V
G = 1, V
(Note 3)
O
O
O
OST
S
S
CM
S
S
S
= 2.3V to 5V
= 5V to 18V
= 2.3V to 18V
= 2.3V to 5V
= 5V to 18V
= 10V, G = 1
= 10V, G = 10 and 100
= 10V, G = 1000
G = 1
G = 10
G = 100
G = 1000
G = 1
G = 10
G = 100
G = 1000
L
= 0V to 10V
= V
= 2k, unless otherwise noted. (Note 4)
OUT
OSI
+ V
= 10V
OSO
G
/G
.
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 6: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25 C, but
the IC is cycled to 85 C I-grade (or 70 C C-grade) or – 40 C I-grade
(0 C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
Note 7: Typical parameters are defined as the 60% of the yield parameter
distribution.
– V
– V
– V
– V
– V
MIN
0.55
S
S
114
116
100
120
125
128
S
S
S
86
98
15
+ 2.1
+ 2.1
+ 1.4
+ 1.6
+ 1.6
LT1167AI
0.014
0.130
0.140
0.160
0.05
0.95
TYP
180
110
180
105
118
133
112
125
132
140
3.0
0.8
0.3
0.5
1.1
26
20
20
30
90
20
2
5
+ V
+ V
+ V
+ V
+ V
MAX
0.04
0.40
0.40
0.40
S
S
S
S
S
500
550
600
0.3
1.6
15
20
70
50
75
5
– 1.3 – V
– 1.4 – V
– 1.3 – V
– 1.5 – V
– 1.6 – V
MIN
0.55
S
S
112
112
115
120
125
S
S
S
81
95
95
15
+ 2.1
+ 2.1
+ 1.4
+ 1.6
+ 1.6
LT1167I
0.015
0.140
0.150
0.180
0.06
0.95
TYP
200
120
220
105
118
133
112
125
132
140
3.0
0.3
0.6
1.1
30
20
25
30
90
20
3
6
1
+V
+ V
+ V
+ V
+ V
MAX
0.05
0.42
0.42
0.45
100
100
600
S
S
S
S
S
700
800
0.4
1.6
LT1167
20
30
50
6
– 1.3
– 1.4
– 1.3
– 1.5
– 1.6
ppm/ C
UNITS
pA/ C
pA/ C
5
ppm
ppm
ppm
V/ C
V/ C
V/ s
mA
mA
pA
pA
dB
dB
dB
dB
dB
dB
dB
dB
%
%
%
%
V
V
V
V
V
V
V
V
V