LT1336 Linear Technology, LT1336 Datasheet

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LT1336

Manufacturer Part Number
LT1336
Description
Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator
Manufacturer
Linear Technology
Datasheet

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APPLICATIONS
FEATURES
TYPICAL
Floating Top Driver Switches Up to 60V
Internal Boost Regulator for DC Operation
Drives Gate of Top N-Channel MOSFET
above Supply
180ns Transition Times Driving 10,000pF
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
Top Drive Maintained at High Duty Cycles
TTL/CMOS Input Levels
Undervoltage Lockout with Hysteresis
Operates at Supply Voltages from 10V to 15V
Separate Top and Bottom Drive Pins
PWM of High Current Inductive Loads
Half-Bridge and Full-Bridge Motor Control
Synchronous Step-Down Switching Regulators
3-Phase Brushless Motor Drive
High Current Transducer Drivers
Class D Power Amplifiers
+
12V
0Hz TO 100kHz
10 F
25V
PWM
R
2
1/4W
SENSE
APPLICATION
10
2
5
3
4
U
SGND
SV
PV
UVOUT
INTOP
INBOTTOM
1N4148
I
SENSE
+
+
6
1
LT1336
SWGND
15
200 H*
TSOURCE
BGATEDR
TGATEDR
TGATEFB
BGATEFB
SWITCH
BOOST
PGND
U
7
16
14
13
12
11
9
8
+
1N4148
C
1 F
BOOST
HV = 40V MAX**
IRFZ44
IRFZ44
DESCRIPTION
The LT
power MOSFET driver. The floating driver can drive the
topside N-channel power MOSFETs operating off a high
voltage (HV) rail of up to 60V (absolute maximum). In
PWM operation an on-chip switching regulator maintains
charge in the bootstrap capacitor even when approaching
and operating at 100% duty cycle.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
, LTC and LT are registered trademarks of Linear Technology Corporation.
+
®
1000 F
100V
Half-Bridge N-Channel
1336 is a cost effective half-bridge N-channel
Power MOSFET Driver
with Boost Regulator
**FOR HV > 40V SEE “DERIVING THE FLOATING
*SUMIDA RCR-664D-221KC
INTOP INBOTTOM TGATEDR
SUPPLY WITH THE FLYBACK TOPOLOGY” IN
APPLICATIONS INFORMATION SECTION
H
H
L
L
U
H
L
H
L
L
H
L
L
BGATEDR
H
L
L
LT1336
L
1336 TA01
1

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LT1336 Summary of contents

Page 1

... LTC and LT are registered trademarks of Linear Technology Corporation. 16 1N4148 40V MAX** + 1000 F 13 IRFZ44 100V + 12 C BOOST IRFZ44 8 7 LT1336 Power MOSFET Driver with Boost Regulator U INTOP INBOTTOM TGATEDR BGATEDR ...

Page 2

... ORDER PART NUMBER 1 16 SWITCH 2 15 SWGND 3 14 BOOST LT1336CN 4 13 TGATEDR LT1336CS 5 12 TGATEFB LT1336IN 6 TSOURCE 11 LT1336IS + BGATEDR 9 S PACKAGE 16-LEAD PLASTIC SO NARROW = 125 ( 125 C, = 110 12V and Pins 1, 16 BOOST TSOURCE MIN ...

Page 3

... Top Gate Release Delay D4 Bottom Gate Release Delay The denotes specifications which apply over the full operating temperature range. Note calculated from the ambient temperature T J dissipation P according to the following formulas: D LT1336CN/LT1336IN )( LT1336CS/LT1336IS )(110 ...

Page 4

... LT1336 W U TYPICAL PERFORMANCE CHARACTERISTICS DC Supply Current vs Supply Voltage TSOURCE 20 18 BOTH INPUTS HIGH OR LOW LOW INTOP V = HIGH V = HIGH INBOTTOM INTOP LOW INBOTTOM SUPPLY VOLTAGE (V) 1336 G01 DC + Dynamic Supply Current vs Input Frequency ...

Page 5

... C = 3000pF LOAD 350 300 TOP DRIVER BOTTOM DRIVER 250 200 150 100 –50 – 125 100 TEMPERATURE ( C) 1336 G16 LT1336 Bottom Gate Fall Time vs Temperature 210 + V = 12V 190 170 C = 10000pF LOAD 150 130 110 3000pF LOAD 1000pF ...

Page 6

... LT1336 W U TYPICAL PERFORMANCE CHARACTERISTICS V Regulated Output BOOST vs Temperature 12.0 11.5 11.0 V – V BOOST 10.5 10.0 9.5 9.0 8.5 8.0 –50 – TEMPERATURE ( PIN FUNCTIONS I (Pin 1): Boost Regulator I SENSE SENSE An R placed between Pin 1 and V SENSE peak current. Pin 1 can be left open if the boost regulator is not used. ...

Page 7

... U U FUNCTIONAL DIAGRA + SENSE – 6V 480mV + 2 BIAS INTOP 5V 3k INBOTTOM 4 5V UVOUT 5 SGND 6 PGND 7 BGATEFB 8 W TRIP = 10.6V TOP UV TRIP = 8.7V DETECT BOTTOM UV LOCK – + 2.9V – + 2.5V LT1336 16 SWITCH 15 SWGND 14 BOOST 13 TGATEDR 12 TGATEFB 11 TSOURCE + BGATEDR 1336 FD 7 ...

Page 8

... DIAGRA 2V INTOP 0.8V 2V INBOTTOM 0.8V 12V TOP GATE DRIVER 12V 10V BOTTOM GATE 2V DRIVER 1N4148 200 H* LT1336 SWITCH I SENSE + + SWGND 3 14 INTOP BOOST 4 13 INBOTTOM TGATEDR 5 12 UVOUT TGATEFB 6 11 SGND TSOURCE + 7 PV ...

Page 9

... V BOOST The top and bottom gate drivers in the LT1336 each utilize two gate connections Gate Drive pin, which provides the turn-on and turn-off currents through an optional series gate resistor, and 2) a Gate Feedback pin which connects directly to the gate to monitor the gate-to-source voltage ...

Page 10

... SENSE 2 I SENSE 1/4W SWITCH + SWGND BOOST + LT1336 V BOOST – TSOURCE TGATEDR TGATEFB * SUMIDA RCR-664D-221KC Figure 1. Using the Boost Regulator The boost regulator works as follows: when switch S is on, the inductor current ramps up as the magnetic field builds up. During this interval energy is being stored in the ...

Page 11

... W U Power MOSFET Selection Since the LT1336 inherently protects the top and bottom MOSFETs from simultaneous conduction, there are no size or matching constraints. Therefore, selection can be made based on the operating voltage and R D1 ments ...

Page 12

... TOP The actual increase in supply current is slightly higher due to LT1336 switching losses and the fact that the gates are than DS(ON) being charged to more than 10V. Supply Current vs Switching Frequency is given in the Typical Performance Characteristics. DS(ON) The LT1336 junction temperature can be estimated by using the equations given in Note 1 of the Electrical Characteristics ...

Page 13

... OUT ducts the short-circuit current almost continuously. Figure 4 shows the LT1336 used to synchronously drive a pair of power MOSFETs in a step-down regulator applica- tion, where the top MOSFET is the switch and the bottom MOSFET replaces the Schottky diode. Since both conduc- tion paths have low losses, this approach can result in very high efficiency (90% to 95%) in most applications ...

Page 14

... Deriving the Floating Supply with the Flyback Topology). To drive a DC motor in both directions, two LT1336s can be used to drive an H-bridge output stage. In this configu- ration the motor can be made to run clockwise, counter- clockwise, stop rapidly (“ ...

Page 15

... INBOTTOM 12 5 –12V 150k UVOUT 11 6 SGND 10 0 PGND 9 8 BGATEFB + 8 10k Figure 7. 200W Class D, 10Hz to 1kHz Amplifier LT1336 60V MAX 1N4148 1000 SWITCH 15 SWGND 14 BOOST 13 IRFZ44 TGATEDR 0 330k TGATEFB 11 TSOURCE L* 10 158 IRFZ44 ...

Page 16

... Half-Bridge N-Channel Power MOSFET Driver LT1160 Half-Bridge N-Channel Power MOSFET Driver LT1162 Full-Bridge N-Channel Power MOSFET Driver Linear Technology Corporation 16 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 : (408) 434-0507 FAX TELEX 1N4148 + 10 F LT1336 SWITCH SENSE SWGND 1N4148 14 3 INTOP ...

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