M63826GP

Manufacturer Part NumberM63826GP
Description7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
ManufacturerMitsubishi Electric
M63826GP datasheet
 


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DESCRIPTION
M63826P, M63826FP and M63826GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
M63826P and M63826FP have the same pin connection as
M54526P and M54526FP. (Compatible with M54526P and
M54526FP) More over, the features of M63826P and
M63826FP are equal or superior to those of M54526P and
M54526FP.
FEATURES
Three package configurations (P, FP and GP)
Pin connection Compatible with M54526P and M54526FP
High breakdown voltage (BV
High-current driving (I
C(max)
With clamping diodes
Driving available with PMOS IC output of 8-18V
Wide operating temperature range (Ta = –40 to +85 C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63826P, M63826FP and M63826GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 10.5k
and input pins. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin (pin 9). The
output transistor emitters are all connected to the GND pin
(pin 8). The collector current is 500mA maximum. Collector-
emitter supply voltage is 50V maximum.The M63826FP and
M63826GP is enclosed in molded small flat package, en-
abling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-emitter voltage
CEO
I
Collector current
C
V
I
Input voltage
I
Clamping diode forward current
F
V
Clamping diode reverse voltage
R
P
Power dissipation
d
T
Operating temperature
opr
T
Storage temperature
stg
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
CIRCUIT DIAGRAM
50V)
CEO
= 500mA)
INPUT
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
between input transistor bases
(Unless otherwise noted, Ta = –40 ~ +85 C)
Conditions
Output, H
Current per circuit output, L
Ta = 25 C, when mounted on board
M63826P/FP/GP
IN1
1
O1
16
IN2
2
15
O2
IN3
3
14
O3
IN4
INPUT
4
13
O4
OUTPUT
IN5
5
12
O5
IN6
6
11
O6
IN7
7
10
O7
GND
8
9
COM COMMON
16P4(P)
16P2N-A(FP)
Package type
16P2S-A(GP)
COM
OUTPUT
10.5k
7.2k
3k
GND
The seven circuits share the COM and GND
Unit :
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
C
C
Jan. 2000

M63826GP Summary of contents

  • Page 1

    ... COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector- emitter supply voltage is 50V maximum.The M63826FP and M63826GP is enclosed in molded small flat package, en- abling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol ...

  • Page 2

    RECOMMENDED OPERATING CONDITIONS Symbol Parameter V Output voltage O Duty Cycle Collector current more than 8% (Current per 1 cir more than 5% cuit when 7 circuits more than 4% I ...

  • Page 3

    ... TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M63826P 1.5 M63826FP 1.0 M63826GP 0 Ambient temperature Duty Cycle-Collector Characteristics (M63826P) 500 400 300 200 •The collector current values represent the current per circuit. 100 •Repeated frequencyy 10Hz •The value the circle represents the value of the simultaneously-operated circuit. • ...

  • Page 4

    ... Ta = – Input voltage V (V) I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> Duty Cycle-Collector Characteristics (M63826GP) 500 400 1 300 2 200 •The collector current values 6 100 7 represent the current per circuit. •Repeated frequency 10Hz •The value the circle represents the value of the simultaneously-operated circuit. • ...