MX25L3205 Macronix International, MX25L3205 Datasheet - Page 40

• Manufacturer Part Number: MX25L3205
• Description: 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
• Manufacturer: Macronix International

www.DataSheet4U.com
ERASE AND PROGRAMMING PERFORMANCE
P/N: PM1169
Note:
1. Typical program and erase time assumes the following conditions: 25 C, 3.0V, and all bits are programmed by checker-
2. Under worst conditions of 70 C and 3.0V. Maximum values are up to including 10K program/erase cycles.
3. System-level overhead is the time required to execute the command sequences for the page program command.
4. Excludes 00H programming prior to erasure. (In the pre-programming step of the embedded erase algorithm, all bits are
LATCH-UP CHARACTERISTICS
PARAMETER
Chip Erase Time
Chip Erase Time
(with ACC=12V)
Sector erase Time
Sector erase Time
(with ACC=12V)
Additional 4Kb Erase Time
Page Programming Time
Page Programming Time
(with ACC=12V)
Erase/Program
Cycle
Input Voltage with respect to GND on ACC
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
board pattern.
programmed to 00H before erasure)
Main Array
Additional 4Kb
100K
Min.
10K
TYP. (1)
0.8
2.4
64
51
25
1
3
40
Max. (2)
103
128
2.4
9.6
50
12
3
cycles
cycles
UNIT
mS
mS
mS
s
s
s
s
MX25L3205
Note (4)
Note (4)
Note (4)
Note (4)
overhead(3)
Comments
Excludes system level
-100mA
-1.0V
-1.0V
-1.0V
MIN.
REV. 1.0, JUL. 15, 2005
VCC + 1.0V
2 VCCmax
+100mA
12.5V
MAX.