VCR11N Linear Integrated Systems, VCR11N Datasheet

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VCR11N

Manufacturer Part Number
VCR11N
Description
N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR
Manufacturer
Linear Integrated Systems
Datasheet
Linear Integrated Systems
Linear Integrated Systems
FEATURES
SECOND SOURCE FOR SILICONIX VCR11N
VOLTAGE CONTROLLED RESISTANCE
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
Forward Gate Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
r
BV
V
r
DS(max)
1.
2.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
r
DS(min)
C
C
I
ds(on)
GS(off)
GSS
dgo
sgo
GSS
Absolute maximum ratings are limiting values above which serviceability may be impaired.
V
GS1
+ Control Voltage necessary to force r
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate Reverse Current
Dynamic Drain to Source
On Resistance
Static Drain to Source
On Resistance Ratio
Drain to Gate Capacitance
Source to Gate Capacitance
1
DS
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
-65 to +150 °C
-55 to +135 °C
to 200Ω or 2kΩ.
100 to 200Ω
300mW
10mA
25V
25V
0.95
0.95
MIN
100
-25
-8
TYP
MAX UNITS
-0.2
200
-12
1
1
8
8
VOLTAGE CONTROLLED
*Contact the factory for surface mount
package options and pin outs.
nA
pF
pF
V
N-CHANNEL JFET
VCR11N
D1
G1
S1
CONDITIONS
I
V
V
V
V
V
V
I
RESISTOR
G
D
BOTTOM VIEW
GS
GS
DS
GS1
GD
GS
= -1µA, V
= 1µA, V
2
= 100mV, r
= -15V, V
= 0V, I
= -10V, I
= -10V, I
= V
3
1
TO-71
GS2
D
DS
, r
DS
= 0A, f = 1kHz
D
S
DS
= 10V
DS
= 0V
= 0A, f = 1MHz
= 0A, f = 1MHz
5
7
DS
= 2kΩ
= 0V
6
= 200Ω
G2
S2
D2
2
2
n or

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