sis412dn Vishay, sis412dn Datasheet - Page 4

• Manufacturer Part Number: sis412dn
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiS412DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
0.4
I
D
J
25
- Temperature (°C)
= 250 µA
0.6
50
75
0.8
0.01
100
0.1
10
100
1
T
0.1
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
* V
1.0
Limited by R
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
V
New Product
150
DS
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
BVDSS Limited
DS(on)
10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0.001
0
is specified
0
1s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
100 µs
1 ms
10 ms
100 ms
I
D
= 7.8 A
0.01
100
2
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
S09-0135-Rev. C, 02-Feb-09
1
Document Number: 69006
6
10
T
T
J
J
= 125 °C
8
= 25 °C
100
1000
10