sfu9014 ETC-unknow, sfu9014 Datasheet

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sfu9014

Manufacturer Part Number
sfu9014
Description
Advanced Power Mosfet
Manufacturer
ETC-unknow
Datasheet
Advanced Power MOSFET
Thermal Resistance
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 A (Max.) @ V
n Lower R
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
J
dv/dt
R
R
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AS
AR
JC
JA
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.362
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
(Typ.)
Characteristic
Characteristic
A
C
=25
=25
C
C
=25
=100
*
o
o
C)
C)
DS
o
C)
o
*
C)
= -60V
O
O
O
O
O
2
1
1
1
3
Typ.
--
--
--
- 55 to +150
0.19
Value
-5.3
-3.7
120
-5.3
-5.5
300
-60
2.4
2.5
21
24
1
SFR/U9014
BV
R
I
30
1. Gate 2. Drain 3. Source
D
3
D-PAK
DS(on)
= -5.3 A
DSS
Max.
5.21
110
50
= 0.5
2
= -60 V
1
2
3
I-PAK
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
W
W
V
A
V
A
A
C
Rev. C
o
C

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sfu9014 Summary of contents

Page 1

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 A (Max Lower R : ...

Page 2

SFR/U9014 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...

Page 3

P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : - 5.0 V Bottom : - ...

Page 4

SFR/U9014 Fig 7. Breakdown Voltage vs. Temperature Junction Temperature ...

Page 5

P-CHANNEL POWER MOSFET “ Current Regulator ” 50K 12V 200nF 300nF V GS -3mA R 1 Current Sampling (I Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out -10V Fig 14. Unclamped Inductive Switching ...

Page 6

SFR/U9014 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) DUT ) DUT ) + V DS DUT -- I S Driver Compliment ...

Page 7

CROSSVOLT â â â â ...

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