ipd13n03lag Infineon Technologies Corporation, ipd13n03lag Datasheet

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ipd13n03lag

Manufacturer Part Number
ipd13n03lag
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD13N03LAG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.2
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
®
2 Power-Transistor
IPD13N03LA
P-TO252-3-11
13N03LA
4)
j
=25 °C, unless otherwise specified
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPF13N03LA
P-TO252-3-23
13N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=24 A, R
=30 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
IPS13N03LA
P-TO251-3-11
13N03LA
DS(on),max
IPS13N03LA G
IPD13N03LA G
-55 ... 175
55/175/56
Value
210
±20
30
30
60
46
6
IPU13N03LA
P-TO251-3-1
13N03LA
IPU13N03LA G
IPF13N03LA G
25
12.8
30
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-14

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ipd13n03lag Summary of contents

Page 1

OptiMOS ® 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter 1000 limited by on-state resistance ...

Page 5

Typ. output characteristics I =f =25 ° parameter Typ. transfer characteristics I =f |>2 ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - Typ. Capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 100 °C 150 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline Rev. 2.2 IPD13N03LA G IPS13N03LA G PG-TO252-3-11 page 8 IPF13N03LA G IPU13N03LA G 2008-04-14 ...

Page 9

Package Outline PG-TO252-3-23: Outline Footprint: Rev. 2.2 IPD13N03LA G IPS13N03LA G PG-TO252-3-23 page 9 IPF13N03LA G IPU13N03LA G 2008-04-14 ...

Page 10

Package Outline Rev. 2.2 IPD13N03LA G IPS13N03LA G PG-TO251-3-11 page 10 IPF13N03LA G IPU13N03LA G 2008-04-14 ...

Page 11

Package Outline Rev. 2.2 IPD13N03LA G IPS13N03LA G PG-TO251-3-21 page 11 IPF13N03LA G IPU13N03LA G 2008-04-14 ...

Page 12

Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...

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